BTA2008W-600D NXP Semiconductors, BTA2008W-600D Datasheet - Page 8

• Manufacturer Part Number: BTA2008W-600D
• Description: Planar passivated high commutation three quadrant triac in a SOT223 surface mountable plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BTA2008W-600D
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on time I
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
V
V
waveform; gate open circuit
V
dV
dI
T
TM
D
D
D
D
D
D
D
D
D
D
DM
D
G
= 0.85 A; T
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 400 V; T
= 1 A; V
Figure 9
Figure 9
Figure 9
Figure 10
Figure 10
Figure 10
Figure 13
= 402 V; T
/dt = 10 V/µs; gate open circuit
Rev. 1 — 7 July 2011
T
T
T
G
G
G
T
D
j
T
= 0.1 A; T2+ G-; T
= 0.1 A; T2+ G+; T
= 0.1 A; T2- G-; T
j
= 0.1 A; T
= 25 °C; see
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 600 V; I
j
j
= 25 °C; see
= 0.1 A; T
= 125 °C
= 125 °C; I
j
= 125 °C; exponential
j
G
= 25 °C;
j
= 100 mA;
= 125 °C
T(RMS)
Figure 11
Figure 12
j
j
j
j
= 25 °C;
= 0.8 A;
j
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
BTA2008W-600D
Min
0.25
0.25
0.25
-
-
-
-
-
-
0.2
-
200
0.5
-
Typ
-
-
-
-
-
-
-
1.35
0.9
0.3
0.1
-
-
2
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
5
5
5
10
20
10
10
1.6
2
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
µs
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