AD8432 Analog Devices, AD8432 Datasheet - Page 5

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AD8432

Manufacturer Part Number
AD8432
Description
Dual-Channel Ultralow Noise Amplifier with Selectable Gain and Input Impedance
Manufacturer
Analog Devices
Datasheet

Specifications of AD8432

Vcc-vee
4.5V to 5.5V
Isy Per Amplifier
12mA
Packages
CSP
-3db Bandwidth
200MHz
Slew Rate
170V/µs
Vos
1mV
Ib
n/a
# Opamps Per Pkg
2
Input Noise (nv/rthz)
0.8nV/rtHz

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AD8432ACPZ-WP
Manufacturer:
Analog Devices Inc
Quantity:
135
Part Number:
AD8432ACPZ-WP
Manufacturer:
NSC
Quantity:
357
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Voltage
Power Dissipation
Temperature
Package Glass Transition Temperature (T
Lead Temperature (Soldering, 60 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
soldered in a circuit board for surface-mount packages. The θ
value in Table 3 assumes a 4-layer JEDEC standard board with
zero airflow.
Table 3. Thermal Resistance
Parameter
40-Lead LFCSP
1
4-layer JEDEC board (2S2P).
JA
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
is specified for the worst-case conditions, that is, a device
θ
57.9
JA
1
θ
11.2
JC
G
)
θ
35.9
JB
Rating
5.5 V
0 V to VPS
120 mW
–40°C to +85°C
–65°C to +150°C
150°C
300°C
Ψ
1.1
JT
Unit
°C/W
Rev. B | Page 5 of 28
JA
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the AD8432 is limited
by the associated rise in junction temperature (T
approximately 150°C, which is the glass transition temperature,
the properties of the plastic change. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the amplifiers. Exceeding a temperature of 150°C for an
extended period can cause changes in silicon devices, potentially
resulting in a loss of functionality.
ESD CAUTION
J
) on the die. At
AD8432

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