BGY885B,112 NXP Semiconductors, BGY885B,112 Datasheet - Page 3

IC AMP PUSH-PULL SOT115J

BGY885B,112

Manufacturer Part Number
BGY885B,112
Description
IC AMP PUSH-PULL SOT115J
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BGY885B,112

Applications
CATV
Number Of Circuits
1
Current - Supply
235mA
Mounting Type
Chassis Mount
Package / Case
SOT-115J
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934032050112
BGY885B
BGY885B
Philips Semiconductors
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
Notes
1. f
2. Measured according to DIN45004B:
3. The module normally operates at V
2001 Nov 14
G
SL
FL
s
s
s
CTB
CSO
d
V
NF
I
tot
11
22
21
SYMBOL
2
o
860 MHz, 20 dB gain push-pull amplifier
p
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 860.25 MHz; V
= 55.25 MHz; V
= 805.25 MHz; V
= 851.25 MHz; V
= 858.25 MHz; V
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
composite second order distortion 49 channels flat;
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
p
q
q
r
q
p
q
= 44 dBmV;
= 860.5 MHz.
= V
= 44 dBmV;
= V
= V
PARAMETER
f
r
= 849.25 MHz.
o
o
o
;
6 dB;
6 dB;
B
B
= 24 V; T
= 24 V, but is able to withstand supply transients up to 30 V.
mb
f = 50 MHz
f = 860 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 860 MHz
f = 50 MHz
49 channels flat;
V
measured at 859.25 MHz
V
measured at 860.5 MHz
note 1
d
f = 50 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 3
im
o
o
= 30 C; Z
= 44 dBmV;
= 44 dBmV;
= 60 dB; note 2
CONDITIONS
3
S
= Z
L
= 75
19.5
20
0
20
18.5
17
15.5
14
20
18.5
17
15.5
14
57.5
45
MIN.
59
TYP.
Product specification
20.5
2
+45
5
5.5
6.5
6.5
7.5
235
0.3
60
60
68
MAX.
BGY885B
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dBmV
dB
dB
dB
dB
dB
mA
UNIT

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