CGD914,112 NXP Semiconductors, CGD914,112 Datasheet - Page 2

IC AMP GAIN POWER 860MHZ SOT115J

CGD914,112

Manufacturer Part Number
CGD914,112
Description
IC AMP GAIN POWER 860MHZ SOT115J
Manufacturer
NXP Semiconductors
Datasheet

Specifications of CGD914,112

Applications
CATV
Number Of Circuits
1
Current - Supply
360mA
Mounting Type
Chassis Mount
Package / Case
SOT-115J
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055954112
CGD914
CGD914
NXP Semiconductors
FEATURES
 Excellent linearity
 Extremely low noise
 Excellent return loss properties
 Rugged construction
 Gold metallization ensures excellent reliability.
APPLICATIONS
 CATV systems operating in the 40 to 870 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 01
G
I
V
V
T
T
tot
frequency range.
SYMBOL
SYMBOL
stg
mb
B
i
860 MHz, 20 dB gain power doubler
amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
single tone
132 channels flat
PARAMETER
PARAMETER
f = 45 MHz
f = 870 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
2 and 3
7 and 8
PIN
1
5
9
Side view
input
common
+V
common
output
Fig.1 Simplified outline.
B
CGD914
1
CGD914; CGD914MI
2
19.75
20.2
345
40
20
3
MIN.
MIN.
5
DESCRIPTION
7
8
9
Product specification
20.25
21.5
375
30
70
45
+100
+100
MSA319
output
common
+V
common
input
MAX.
MAX.
B
CGD914MI
dB
dB
mA
V
dBmV
dBmV
C
C
UNIT
UNIT

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