ATmega329P Atmel Corporation, ATmega329P Datasheet - Page 20
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ATmega329P
Manufacturer Part Number
ATmega329P
Description
Manufacturer
Atmel Corporation
Specifications of ATmega329P
Flash (kbytes)
32 Kbytes
Pin Count
64
Max. Operating Frequency
20 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
54
Ext Interrupts
17
Usb Speed
No
Usb Interface
No
Spi
2
Twi (i2c)
1
Uart
1
Segment Lcd
100
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
2
Eeprom (bytes)
1024
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
4
Input Capture Channels
1
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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7.4
7.4.1
7.4.2
8021G–AVR–03/11
EEPROM Data Memory
EEPROM Write During Power-down Sleep Mode
Preventing EEPROM Corruption
Figure 7-3.
The ATmega329P/3290P contains 1Kbytes of data EEPROM memory. It is organized as a sep-
arate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM, see
page
When entering Power-down sleep mode while an EEPROM write operation is active, the
EEPROM write operation will continue, and will complete before the Write Access time has
passed. However, when the write operation is completed, the clock continues running, and as a
consequence, the device does not enter Power-down entirely. It is therefore recommended to
verify that the EEPROM write operation is completed before entering Power-down.
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
311,
page
Address
clk
On-chip Data SRAM Access Cycles
Data
Data
317, and
WR
CPU
RD
CC,
page 299
the EEPROM data can be corrupted because the supply voltage is
Compute Address
T1
Memory Access Instruction
respectively.
Address valid
T2
ATmega329P/3290P
Next Instruction
CC
reset Protection circuit can
T3
20
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