K4E151611C-TC50 Samsung, K4E151611C-TC50 Datasheet

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K4E151611C-TC50

Manufacturer Part Number
K4E151611C-TC50
Description
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin
Manufacturer
Samsung
Datasheet

Specifications of K4E151611C-TC50

Case
TSOP
K4E171611C, K4E151611C
K4E171612C, K4E151612C
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K
Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features
of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS pro-
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,
personal computer and portable machines.
FEATURES
• Part Identification
• Active Power Dissipation
• Refresh Cycles
• Performance Range
Speed
K4E171612C
K4E151612C
K4E171611C
K4E151611C
-45
-50
-60
- K4E171611C-J(T)(5V, 4K Ref.)
- K4E151611C-J(T) (5V, 1K Ref.)
- K4E171612C-J(T)(3.3V, 4K Ref.)
- K4E151612C-J(T)(3.3V, 1K Ref.)
Speed
-45
-50
-60
Part
NO.
45ns
50ns
60ns
t
RAC
360
324
288
4K
3.3V
3.3V
V
13ns
15ns
17ns
5V
5V
t
CC
CAC
3.3V
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Refresh
540
504
468
cycle
1K
104ns
69ns
84ns
4K
1K
t
RC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Normal
16ns
20ns
25ns
550
495
440
64ms
16ms
t
Refresh period
4K
HPC
5V
Unit : mW
5V/3.3V
5V/3.3V
5V/3.3V
Remark
128ms
L-ver
825
770
715
1K
DESCRIPTION
(A0 - A9)
(A0 - A9)
A0 - A7
A0-A11
Note)
UCAS
LCAS
RAS
W
*1
*1
*1
: 1K Refresh
FUNCTIONAL BLOCK DIAGRAM
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V 10% power supply (5V product)
• Single +3.3V 0.3V power supply (3.3V product)
(Fast Page Mode with Extended Data Out)
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
1,048,576 x16
Memory Array
Row Decoder
Cells
CMOS DRAM
Vcc
Vss
Data out
Data out
Data in
Data in
Lower
Lower
Buffer
Buffer
Upper
Buffer
Upper
Buffer
OE
DQ15
DQ0
DQ7
DQ8
to
to

Related parts for K4E151611C-TC50

K4E151611C-TC50 Summary of contents

Page 1

... L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - K4E171611C-J(T)(5V, 4K Ref.) - K4E151611C-J(T) (5V, 1K Ref.) - K4E171612C-J(T)(3.3V, 4K Ref.) - K4E151612C-J(T)(3.3V, 1K Ref.) • Active Power Dissipation 3.3V Speed ...

Page 2

... K4E171611C, K4E151611C K4E171612C, K4E151612C • K4E17(5)1611(2)C DQ0 3 DQ1 4 DQ2 DQ3 DQ4 8 DQ5 9 DQ6 10 DQ7 11 N RAS 15 *A11(N.C) 16 *A10(N. *A10 and A11 are N.C for K151611(2)C(5V/3.3V, 1K Ref. product 400mil 42 SOJ T : 400mil 50(44) TSOP II ...

Page 3

... K4E171611C, K4E151611C K4E171612C, K4E151612C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet ...

Page 4

... K4E171611C, K4E151611C K4E171612C, K4E151612C DC AND OPERATING CHARACTERISTICS Symbol Power Speed -45 I Don t care -50 CC1 -60 Normal I Don t care CC2 L -45 I Don t care -50 CC3 -60 -45 I Don t care -50 CC4 -60 Normal I Don t care CC5 L -45 I Don t care -50 CC6 - Don t care CC7 I L Don t care ...

Page 5

... K4E171611C, K4E151611C K4E171612C, K4E151612C CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time ...

Page 6

... K4E171611C, K4E151611C K4E171612C, K4E151612C AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address W delay time CAS precharge to W delay time ...

Page 7

... K4E171611C, K4E151611C K4E171612C, K4E151612C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times are measured between V Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...

Page 8

... K4E171611C, K4E151611C K4E171612C, K4E151612C are referenced to the earlier CAS falling edge. 11. ASC CAH 12 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle referenced to the later CAS falling edge at word read-modify-write cycle. ...

Page 9

... K4E171611C, K4E151611C K4E171612C, K4E151612C WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t t RCD ...

Page 10

... K4E171611C, K4E151611C K4E171612C, K4E151612C LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...

Page 11

... K4E171611C, K4E151611C K4E171612C, K4E151612C UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...

Page 12

... K4E171611C, K4E151611C K4E171612C, K4E151612C WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 13

... K4E171611C, K4E151611C K4E171612C, K4E151612C LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 14

... K4E171611C, K4E151611C K4E171612C, K4E151612C UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 15

... K4E171611C, K4E151611C K4E171612C, K4E151612C WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 16

... K4E171611C, K4E151611C K4E171612C, K4E151612C LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 17

... K4E171611C, K4E151611C K4E171612C, K4E151612C UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 18

... K4E171611C, K4E151611C K4E171612C, K4E151612C WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t RCD t RSH t CAS ...

Page 19

... K4E171611C, K4E151611C K4E171612C, K4E151612C LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RWC t RAS t t RCD ...

Page 20

... K4E171611C, K4E151611C K4E171612C, K4E151612C UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD ...

Page 21

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 22

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 23

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 24

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...

Page 25

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 ...

Page 26

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 ...

Page 27

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD t RAH t t ASR ASC ROW A ADDR RCS DQ0 ~ DQ7 ...

Page 28

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD t RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 ...

Page 29

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD t RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 ...

Page 30

... K4E171611C, K4E151611C K4E171612C, K4E151612C HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS t RCD LCAS t RAD RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...

Page 31

... K4E171611C, K4E151611C K4E171612C, K4E151612C RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW ADDR IL CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care ...

Page 32

... K4E171611C, K4E151611C K4E171612C, K4E151612C HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...

Page 33

... K4E171611C, K4E151611C K4E171612C, K4E151612C HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 34

... K4E171611C, K4E151611C K4E171612C, K4E151612C CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 CEZ DQ8 ~ DQ15 RASS t CSR t CSR CMOS DRAM ...

Page 35

... K4E171611C, K4E151611C K4E171612C, K4E151612C PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 0.050 (1.27) 50(44) TSOP(II) 400mil 0.841 (21.35) 0.821 (20.85) 0.829 (21.05) 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) MAX 0.047 (1.20) MAX 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) ...

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