K4E151611 Samsung, K4E151611 Datasheet
K4E151611
Available stocks
Related parts for K4E151611
K4E151611 Summary of contents
Page 1
... It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - K4E171611D-J(T) (5V, 4K Ref.) - K4E151611D-J(T) (5V, 1K Ref.) - K4E171612D-J(T) (3.3V, 4K Ref.) - K4E151612D-J(T) (3.3V, 1K Ref.) • Active Power Dissipation 3.3V Speed ...
Page 2
... DQ6 10 DQ7 11 N RAS 15 *A11(N.C) 16 *A10(N. *A10 and A11 are N.C for K4E151611(2)D(5V/3.3V, 1K Ref. product 400mil 42 SOJ T : 400mil 50(44) TSOP II PIN CONFIGURATION (Top Views DQ0 DQ15 DQ1 40 DQ14 DQ2 39 DQ13 DQ3 38 DQ12 ...
Page 3
... K4E171611D, K4E151611D K4E171612D, K4E151612D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet ...
Page 4
... K4E171611D, K4E151611D K4E171612D, K4E151612D DC AND OPERATING CHARACTERISTICS Symbol Power Speed -45 I Don t care -50 CC1 -60 Normal I Don t care CC2 L -45 I Don t care -50 CC3 -60 -45 I Don t care -50 CC4 -60 Normal I Don t care CC5 L -45 I Don t care -50 CC6 - Don t care CC7 I L Don t care ...
Page 5
... K4E171611D, K4E151611D K4E171612D, K4E151612D CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V CC Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time ...
Page 6
... K4E171611D, K4E151611D K4E171612D, K4E151612D AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address W delay time CAS precharge to W delay time ...
Page 7
... K4E171611D, K4E151611D K4E171612D, K4E151612D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times are measured between V Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...
Page 8
... K4E171611D, K4E151611D K4E171612D, K4E151612D are referenced to the earlier CAS falling edge. 11. ASC CAH 12 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle referenced to the later CAS falling edge at word read-modify-write cycle. ...
Page 9
... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t CAS t CSH ...
Page 10
... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
Page 11
... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...
Page 12
... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 13
... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 14
... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 15
... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 16
... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 17
... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 18
... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RWC t RAS t RCD t RSH t CAS ...
Page 19
... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RWC t RAS t t RCD ...
Page 20
... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 I/OL t RWC t RAS t t RCD ...
Page 21
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 22
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 23
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 24
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
Page 25
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
Page 26
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
Page 27
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP t RCD LCAS RAD t RAH t t ASR ASC ROW A ADDR RCS DQ0 ~ DQ7 ...
Page 28
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP t RCD LCAS RAD t RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 ...
Page 29
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP t RCD UCAS CRP LCAS RAD t RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 ...
Page 30
... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS t RCD LCAS t RAD RAH t t ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
Page 31
... K4E171611D, K4E151611D K4E171612D, K4E151612D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW ADDR IL CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care ...
Page 32
... K4E171611D, K4E151611D K4E171612D, K4E151612D HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
Page 33
... K4E171611D, K4E151611D K4E171612D, K4E151612D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ROW A ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
Page 34
... K4E171611D, K4E151611D K4E171612D, K4E151612D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS RPC UCAS LCAS DQ0 ~ DQ7 CEZ DQ8 ~ DQ15 RASS t CSR t CSR CMOS DRAM ...
Page 35
... K4E171611D, K4E151611D K4E171612D, K4E151612D PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 0.050 (1.27) 50(44) TSOP(II) 400mil 0.841 (21.35) 0.821 (20.85) 0.829 (21.05) 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) MAX 0.047 (1.20) MAX 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.006 (0.15) 0.012 (0.30) ...