HN29W25611ST-80 HITACHI, HN29W25611ST-80 Datasheet
HN29W25611ST-80
Related parts for HN29W25611ST-80
HN29W25611ST-80 Summary of contents
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... More than 16,057-sector (271,299,072-bit) Description The Hitachi HN29W25611S Series is CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes ...
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... SB3 The following architecture is required for data reliability. Error correction: more than 3-bit error correction per each sector read Spare sectors: 1.8% (290 sectors)/chip within usable sectors Ordering Information Type No. Available sector HN29W25611ST-80 More than 16,057 sectors ...
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Pin Arrangement RES RDY/Busy I/O0 I/O1 I/O2 I/ I/O4 I/O5 I/O6 I/O7 CDE V V Pin Description Pin name I/ CDE RDY/Busy RES SC ...
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HN29W25611S Series Block Diagram • • I/O0 • to Multiplexer • I/O7 • • RDY/Busy Control WE signal SC buffer RES CDE 4 Sector X-decoder address buffer Data Input • • • input data ...
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Memory Map and Address Sector address 3FFFH 3FFEH 3FFDH 0002H 0001H 0000H 000H Address Cycles Sector address SA (1): First cycle SA (2): Second cycle Column address CA (1): First cycle CA (2): Second cycle Notes: 1. Some failed sectors ...
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HN29W25611S Series Pin Function CE used to select the device. The status returns to the standby at the rising edge the reading operation. However, the status does not return to the standby at the rising ...
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Command Definition* Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without CA* (With CA* 10 Program (2)* Program (3) ...
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HN29W25611S Series Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without CA* (With CA* 10 Program (2)* Program (3) (Control bytes)* ...
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Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without CA* (With CA* 10 Program (2)* Program (3) (Control bytes)* Program (4) ...
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HN29W25611S Series Mode Description Read Serial Read (1): Memory data D0 to D2111 in the sector of address SA is sequentially read. Output data is not valid after the number of the SC pulse exceeds 2112. When CA is input, ...
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Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by internal control circuits. When CA is input, program data PD ( programmed from CA into the sector ...
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HN29W25611S Series Command/Address/Data Input Sequence Serial Read (1) (With CA before SC) Command 00H SA (1) SA (2) /Address CDE WE Low SC Serial Read (1) (With CA after SC) Command 00H SA (1) SA (2) /Address CDE WE Low ...
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Program (1), (4) (With CA before SC) Command 10H/11H SA (1) SA (2) /Address CDE WE Low SC Program (1), (4) (With CA after SC) Command 10H/11H SA (1) SA (2) /Address CDE WE Low SC Data input Program (1), ...
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HN29W25611S Series Program (3) Command/Address 0FH CDE WE SC Low ID Read Mode Command/Address CDE WE SC Data Recovery Read Mode Command/Address 14 SA (1) SA (2) 90H Low Manufacture Device code code output output 01H CDE WE SC Low ...
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Status Transition V Deep CC Power off standby RES 00H/F0H Read (1) / (2) FFH CE 90H ID read setup FFH CE 20H Erase setup FFH 10H CE Output /11H Program Standby disable (1)/(4) setup FFH 1FH /0FH Program (2)/(3) ...
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HN29W25611S Series Absolute Maximum Ratings Parameter V voltage CC V voltage SS All input and output voltages Operating temperature range Storage temperature range Storage temperature under bias Notes: 1. Relative Vin, Vout = –2.0 V ...
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DC Characteristics ( +70˚C) CC Parameter Input leakage current Output leakage current Standby V current CC Deep standby V current CC Operating V current CC Operating V current (Program) I ...
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HN29W25611S Series Power on and off, Serial Read Mode Parameter Write cycle time Serial clock cycle time ( Serial clock cycle time ( setup time ...
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Parameter SC setup time for CE CDE setup time for WE CDE hold time for WE setup time for RES V CC RES to V hold time CC CE setup time for RES RDY/Busy undefined for V off CC RES ...
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HN29W25611S Series Program, Erase and Erase Verify Parameter Write cycle time Serial clock cycle time ( Serial clock cycle time ( setup time CE hold ...
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Parameter Data setup time for SC Data hold time for SC SC setup for WE SC setup for CE SC hold time for output delay OE to output delay OE high to output float RES to CE ...
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HN29W25611S Series Parameter WE hold time for WE Busy time on read mode Note time after which the I/O pins become open HN29W25611S -80 Symbol Min Typ Max t 1 — — WWH t ...
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Timing Waveforms Power on and off Sequence VRS CES WE t CWRS RES BSY RDY /Busy Notes: 1. RES must be kept at the V to guarantee data stored in ...
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HN29W25611S Series Serial Read (1) (2) Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH ...
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Serial Read (1) with CA after SC Timing Waveform CE t CES CWC CWC WPH WPH OER OEWS CDE CDH OES t t WSD ...
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HN29W25611S Series Program (1) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP CDE t CDH ...
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Program (1) with CA before SC and Status Data Polling Timing Waveform CE t CES CWC CWC CWC OEWS WPH WPH WPH CDS CDS WP ...
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HN29W25611S Series Program (2) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP CDE t CDH ...
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Program (3) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t WPH CDS CDS WP WP CDE t CDH SCS t ...
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HN29W25611S Series Program (4) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP CDE t CDH ...
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Program (4) with CA before SC and Status Data Polling Timing Waveform CE t CES CWC CWC CWC CWC OEWS WPH WPH WPH CDS ...
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HN29W25611S Series ID and Status Register Read Timing Waveform CE t CES OEWS OEPS CDS WP CDE t SCHW SCS DS I/O0 to I/O7 90H RES t RP RDY ...
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Data Recovery Read Timing Waveform CE t CES OEWS OER CDH t CDS WP CDE t WSDR SCS I/O0 to I/O7 01H RES RDY /Busy Notes: 1. The ...
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HN29W25611S Series Clear Status Register Timing Waveform CE t CES OE t OEWS CDH WP CDE t CDS SC t SCS I/O0 to I/O7 50H RES High High-Z RDY /Busy Note 1. The ...
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Function Description Status Register: The HN29W25611S outputs the operation status data as follows: I/O7 pin outputs a V indicate that the memory is in either erase or program operation. The level of I/O7 pin turns the operation ...
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HN29W25611S Series Unusable Sector Initially, the HN29W25611S includes unusable sectors. The unusable sectors must be distinguished from the usable sectors by the system as follows. 1. Check the partial invalid sectors in the devices on the system. The usable sectors ...
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Requirements for High System Reliability The device may fail during a program, erase or read operation due to write or erase cycles. The following architecture will enable high system reliability if a failure occurs. 1. For an error in read ...
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HN29W25611S Series START Program start Program end Check status Yes END Spare Sector Replacement Flow after Program Error 38 Set an usable sector Check RDY/Busy No Clear status register Load data from Data recovery read external buffer Program start Program ...
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Memory Structure Bit: Minimum unit of data. Byte: Input/output data unit in programming and reading. (1 byte = 8 bits) Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = 16,896 bits) Device: 1 device = ...
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... HN29W25611S Series Package Dimensions HN29W25611ST Series (TFP-48D) 12.00 12.40 Max 48 1 0.50 *0.22 0.08 0.08 0.20 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 20.00 0.20 Hitachi Code JEDEC EIAJ Mass (reference value) Unit: mm 0.80 0 – 5 0.50 0.10 TFP-48D Conforms Conforms 0.49 g ...
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... Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics ...