QM30TB-2HB MITSUBISHI, QM30TB-2HB Datasheet - Page 4

• Manufacturer Part Number: QM30TB-2HB
• Manufacturer: MITSUBISHI

10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
–1
0
1
0
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
10
2
1
0
10
10
3 4 5 7
TRANSIENT THERMAL IMPEDANCE
BASE REVERSE CURRENT –I
T
0
–3
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2 3 45 7
2
=25°C
SWITCHING TIME VS. BASE
3
3
4
4
CURRENT (TYPICAL)
5
5
10
7
7
0
10
10
10
1
–2
1
TIME (s)
2 3 4 5 7
2
2
2
3
3
3
4 5
4
4
t
t
s
f
5
5
7
7
10
10
V
I
I
–1
C
B1
2
CC
T
T
10
=30A
2
2
=60mA
j
j
=25°C
=125°C
=600V
1
3
3
B2
4
4
(A)
5
CE
5
2 3
7
7
(V)
10
10
0
3
100
10
10
10
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
T
I
B2
COLLECTOR-EMITTER REVERSE
j
20
CHARACTERISTICS) (TYPICAL)
=125°C
CASE TEMPERATURE T
=–2.5A
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
200
COLLECTOR
DISSIPATION
0.8
40
60
400
1.2
–V
CEO
80 100 120 140
(V)
600
1.6
QM30TB-2HB
SECOND
BREAKDOWN
AREA
800
C
T
T
2.0
INSULATED TYPE
j
j
=25°C
=125°C
( C)
CE
1000
160
2.4
(V)
Feb.1999