QM30TB-2HB MITSUBISHI, QM30TB-2HB Datasheet - Page 3

• Manufacturer Part Number: QM30TB-2HB
• Manufacturer: MITSUBISHI

PERFORMANCE CURVES
10
10
10
50
40
30
20
10
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
0
10
COLLECTOR-EMITTER VOLTAGE V
2.6
0
COLLECTOR-EMITTER SATURATION
–3
BASE-EMITTER VOLTAGE V
V
T
2
CHARACTERISTICS (TYPICAL)
T
COMMON EMITTER OUTPUT
j
CHARACTERISTIC (TYPICAL)
CE
=25°C
j
COMMON EMITTER INPUT
=25°C
3
=4.0V
3.0
T
T
1
4
BASE CURRENT I
j
j
=25°C
=125°C
5
VOLTAGE (TYPICAL)
7
10
3.4
–2
2
2
3
I
4
C
=10A
5
3.8
3
7
10
B
–1
(A)
2
4.2
I
4
C
I
BE
3
=30A
C
=40A
4
(V)
5
CE
7
4.6
(V)
5
10
0
10
10
10
10
10
10
10
10
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
3
2
7
5
4
3
2
7
5
4
3
1
4
3
2
0
1
0
10
10
10
SWITCHING TIME VS. COLLECTOR
I
–I
0
0
V
0
COLLECTOR CURRENT (TYPICAL)
B1
MITSUBISHI TRANSISTOR MODULES
CC
B2
=60mA
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
=600V
=0.6A
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
MEDIUM POWER SWITCHING USE
V
T
T
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
BE(sat)
j
V
j
j
j
=125°C
=25°C
=25°C
=125°C
CURRENT (TYPICAL)
CE(sat)
10
10
10
V
CE
1
1
1
=4V
QM30TB-2HB
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
V
I
T
T
B
CE
=40mA
j
j
=25°C
=125°C
C
C
C
INSULATED TYPE
=10V
(A)
(A)
(A)
t
t
on
t
f
s
10
10
10
2
2
2
Feb.1999