MBM29LV400TC-90PFTN Fujitsu, MBM29LV400TC-90PFTN Datasheet
MBM29LV400TC-90PFTN
Manufacturer Part Number
MBM29LV400TC-90PFTN
Description
Manufacturer
Fujitsu
Datasheets
1.MBM29LV400TC-90PFTN.pdf
(58 pages)
2.MBM29LV400TC-90PFTN.pdf
(55 pages)
3.MBM29LV400TC-90PFTN.pdf
(58 pages)
4.MBM29LV400TC-90PFTN.pdf
(58 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBM29LV400TC-90PFTN
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
Part Number:
MBM29LV400TC-90PFTN-SFE
Manufacturer:
FUJITSU/富士通
Quantity:
20 000
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
4M (512K
MBM29LV400TC/BC
Power Supply Voltage (V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
FEATURES
• Single 3.0 V read, program, and erase
• Compatible with JEDEC-standard commands
• Compatible with JEDEC-standard world-wide pinouts
• Minimum 100,000 program/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
PRODUCT LINE UP
DATA SHEET
Minimizes system level power requirements
Uses same software commands as E
48-pin TSOP(1) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
48-pin CSOP (Package suffix: PCV)
48-ball FBGA (Package suffix: PBT)
48-ball SCSP (Package suffix: PW)
55 ns maximum access time
One 8K word, two 4K words, one 16K word, and seven 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
T = Top sector
B = Bottom sector
Part No.
8/256K
2
PROMs
-55/70/90
V
CC
= 3.3 V
-55
55
55
30
+0.3 V
–0.3 V
16) BIT
MBM29LV400 TC/BC
-70
70
70
30
V
CC
= 3.0 V
+0.6 V
–0.3 V
DS05-20862-8E
-90
90
35
90
(Continued)
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