PTMB100E6C Nihon Inter Electronics (NIEC), PTMB100E6C Datasheet - Page 2

• Manufacturer Part Number: PTMB100E6C
• Manufacturer: Nihon Inter Electronics (NIEC)

ＰＴＭＢ１００Ｅ６
ＰＴＭＢ１００Ｅ６Ｃ
200
180
160
140
120
100
400
350
300
250
200
150
100
80
60
40
20
16
14
12
10
50
8
6
4
2
0
0
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
0
0
0
0
R
T
C
L
=25°C
=3.0
Fig.3- Collector to Emitter On Voltage
4
Fig.1- Output Characteristics (Typical)
1
Collector to Emitter Voltage V
100
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage V
Total Gate Charge Qg (nC)
I
C
100A
=50A
V
15V
GE
8
2
=20V
200
V
100V
CE
200V
=300V
12
3
12V
200A
GE
CE
(V)
300
(V)
16
4
T
T
日本インター株式会社
C
C
=25°C
=25°C
11V
10V
8V
9V
400
20
5
16
14
12
10
8
6
4
2
0
30000
10000
3000
1000
200
180
160
140
120
100
300
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
0.1
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
0
0
0.2
Fig.4- Collector to Emitter On Voltage
Fig.2- Output Characteristics (Typical)
1
4
0.5
Collector to Emitter Voltage V
Collector to Emitter Voltage V
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage V
1
I
C
100A
=50A
2
2
8
V
15V
GE
5
=20V
12
10
3
Cies
Coes
Cres
200A
GE
20
CE
CE
(V)
(V)
(V)
QS043-402-（3/5）
16
4
50
T
T
V
f=1MH
T
C
C
GE
C
=125°C
=125°C
100
=25°C
=0V
12V
11V
10V
9V
8V
Z
200
20
5
00