MBM200GR HITACHI, MBM200GR Datasheet
MBM200GR
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MBM200GR Summary of contents
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... Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] FEATURES • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) • High reliability structure. ...
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VGE 15V14V13V12V 400 = ° 300 = Pc 1250W 200 100 Collector to Emitter Voltage, V Collector current vs. Collector to Emitter voltage 10 = ° ...
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Vcc 600V V 15V Inductive Load 1 0.5 toff 0 0 100 200 Collector Current Switching time vs. Collector current 40 V 600V CC V 15V GE R 6.2 ...
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... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets ...