QM50DY-24B Mitsumi Electronics, Corp., QM50DY-24B Datasheet - Page 4

• Manufacturer Part Number: QM50DY-24B
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
10
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
0
1
0
2
7
5
3
2
7
5
3
2
5
3
2
10
7
COLLECTOR-EMITTER VOLTAGE V
2
1
0
10
2
–1
TRANSIENT THERMAL IMPEDANCE
V
I
I
T
–3
BASE REVERSE CURRENT –I
0
NON–REPETITIVE
C
B1
3
CHARACTERISTIC (TRANSISTOR)
CC
C
=50A
2
2 3 5 7
=100mA
=25°C
SWITCHING TIME VS. BASE
=600V
5
3
2 3 4 5 7
T
T
7
j
j
t
=25°C
=125°C
10
t
5
CURRENT (TYPICAL)
f
s
7
1
10
10
2
1
3
–2
TIME (s)
2
2
5
10
3
3
7
0
10
5 7
5
7
2
10
2 3 4 5 7
10
2
2
–1
3
2
5
3
B2
7
10
(A)
5
CE
7
3
10
(V)
10
2
1
0
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
I
B2
MITSUBISHI TRANSISTOR MODULES
j
=125°C
COLLECTOR-EMITTER REVERSE
20
CHARACTERISTICS) (TYPICAL)
=–1A
200
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
0.4
COLLECTOR
DISSIPATION
40
400
60
0.8
600
–V
CEO
80 100 120 140
800
(V)
1.2
SECOND
BREAKDOWN
AREA
QM50DY-24B
1000
T
T
C
1.6
j
j
INSULATED TYPE
=25°C
=125°C
1200
( C)
CE
1400
160
2.0
(V)
Feb.1999