IXFN44N80 IXYS Corporation, IXFN44N80 Datasheet
IXFN44N80
Manufacturer Part Number
IXFN44N80
Description
Manufacturer
IXYS Corporation
Datasheet
1.IXFN44N80.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN44N80
Manufacturer:
COSEL
Quantity:
134
Part Number:
IXFN44N80P
Quantity:
113
HiPerFET
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
AR
J
JM
stg
DGR
GS
GSM
AS
D
ISOL
DSS
GH(th)
DS(on)
DSS
d
T
T
T
T
T
I
T
Test Conditions
T
T
Continuous
Transient
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
J
C
J
J
GS
GS
DS
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
= 3 mA
D
= 8 mA
, V
= 0.5 • I
G
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MW
DD
T
T
(T
J
J
rr
£ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
min.
800
IXFN 44N80
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
800
800
±20
±30
176
700
150
44
44
64
30
0.165
4
5
max.
±200
100
4.0
2
D
S
V/ns
mA
mJ
V~
V~
nA
mA
°C
°C
°C
W
V
W
V
A
A
A
V
V
V
V
g
J
miniBLOC, SOT-227 B (IXFN)
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
V
I
R
D25
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DSS
DS(on)
E153432
DS (on)
=
=
= 0.165 W
HDMOS
G
800 V
S
TM
44 A
D
process
98594B (02/01)
S
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IXFN44N80 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V ...
Page 2
Symbol Test Conditions D25 C iss C oss rss t d(on d(off g(on thJC R thCK ...