QM150DY-3H Mitsumi Electronics, Corp., QM150DY-3H Datasheet - Page 4

• Manufacturer Part Number: QM150DY-3H
• Manufacturer: Mitsumi Electronics, Corp.

0.10
0.08
0.06
0.04
0.02
10
10
10
10
10
10
FORWARD BIAS SAFE OPERATING AREA
3
2
7
5
4
3
2
7
5
4
3
10
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
2
3 4 5
TRANSIENT THERMAL IMPEDANCE
–3
NON–REPETITIVE
V
I
I
BASE REVERSE CURRENT –I
T
3
0
CHARACTERISTIC (TRANSISTOR)
C
B1
C
CC
=150A
4
2
2
=25°C
=3A
SWITCHING TIME VS. BASE
5
=800V
3
3
T
T
7
7
4
4
j
j
=25°C
=125°C
10
5
CURRENT (TYPICAL)
5
10
7
7
1
0
10
10
2
1
–2
3
TIME (s)
2 3 4 5 7
4
2
5
3
7
4
10
5
7
2
10
2
–1
3
10
4
2
5
1
3
B2
7
4
t
t
10
s
f
(A)
5
CE
2 3
7
3
(V)
2
10
0
400
350
300
250
200
150
100
100
10
10
10
10
50
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
REVERSE BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
400
COLLECTOR
DISSIPATION
0.5
40
HIGH POWER SWITCHING USE
60
800
–V
CEO
80
1
1200
I
(V)
B2
100 120
QM150DY-3H
=–3A
SECOND
BREAKDOWN
AREA
1.5
T
T
1600
C
j
j
=25°C
=125°C
INSULATED TYPE
( C)
140
CE
2000
160
(V)
2
Feb.1999