IXFN80N50Q2 IXYS Corporation, IXFN80N50Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFN80N50Q2
• Manufacturer: IXYS Corporation

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
d(on)
d(off)
S
SM
RM
r
f
rr
fs
thJC
SD
iss
oss
rss
g(on)
gs
gd
thCK
RM
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
F
GS
DS
= I
I
-di/dt = 100 A/µs
V
F
S
= 0 V
R
= 10 V; I
V
V
R
V
= 25A
, V
GS
GS
GS
= 100 V
G
= 1 Ω (External)
GS
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V, Note 1
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
JM
Note 1
(T
(T
DSS
DSS
J
J
, I
, I
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
D
D
= 0.5 • I
= 0.5 • I
D25
D25
min.
min.
40
Characteristic Values
Characteristic Values
7200
1620
0.05
typ.
typ.
320
290
120
1.2
55
29
25
60
11
60
8
0.14
max.
max.
320
250
1.5
80
K/W
K/W
µ C
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
A
V
miniBLOC, SOT-227 B Outline
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Millimeter
IXFN 80N50Q2
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
6,534,343
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Max.