QM150DY-HBK Mitsumi Electronics, Corp., QM150DY-HBK Datasheet - Page 4

• Manufacturer Part Number: QM150DY-HBK
• Manufacturer: Mitsumi Electronics, Corp.

10
0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
–1
FORWARD BIAS SAFE OPERATING AREA
7
5
4
3
2
7
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
0
10
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
10
10
4 5
TRANSIENT THERMAL IMPEDANCE
–3
V
I
I
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
0
B1
C
0
CHARACTERISTIC (TRANSISTOR)
CC
C
=150A
2
2
2
=300mA
=25°C
7
SWITCHING TIME VS. BASE
=300V
3
3
3
10
4
4
4
5
5
5
CURRENT (TYPICAL)
0
7
7
7
10
10
10
2 3 4 5 7
1
–2
1
TIME (s)
2
2
2
3
3
3
4
4
5
5
7
7
10
10
10
100µ
–1
2
T
T
1
t
w
t
j
j
2
2
t
=25°C
=125°C
s
f
=50µ
S
3
3
B2
2 3 4
4
4
(A)
5
5
CE
S
7
7
(V)
10
10
3
0
320
280
240
200
160
120
100
10
10
10
10
80
40
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
REVERSE BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
0.4
3
2
1
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
100
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.8
200
40
HIGH POWER SWITCHING USE
300
60
1.2
–V
CEO
400
80
QM150DY-HBK
(V)
1.6
500
100 120
SECOND
BREAKDOWN
AREA
600
T
T
T
I
C
B2
j
j
2.0
=25°C
=125°C
j
I
=125°C
INSULATED TYPE
B2
( C)
=–10A
700
140
=–5A
CE
800
160
2.4
(V)
Feb.1999