AC16FGM Teccor Electronics, AC16FGM Datasheet - Page 126

• Manufacturer Part Number: AC16FGM
• Manufacturer: Teccor Electronics

AN1001
Critical Rate-of-rise of Off-state Voltage or Static dv/dt
(dv/dt) –
which will cause switching from the off state to the on state
Critical Rate-of-rise of On-state Current (di/dt) –
value of the rate-of-rise of on-state current that a thyristor can
withstand without harmful effect
Gate-controlled Turn-on Time (t
specified point at the beginning of the gate pulse and the instant
when the principal voltage (current) has dropped to a specified
low value (or risen to a specified high value) during switching of a
thyristor from off state to the on state by a gate pulse.
Gate Trigger Current (I
maintain the thyristor in the on state
Gate Trigger Voltage (V
the gate trigger current
Holding Current (I
maintain the thyristor in the on state
Latching Current (I
maintain the thyristor in the on state immediately after the switch-
ing from off state to on state has occurred and the triggering sig-
nal has been removed
On-state Current (I
the on state
On-state Voltage (V
the on state
Peak Gate Power Dissipation (P
may be dissipated between the gate and main terminal 1 (or
cathode) for a specified time duration
Repetitive Peak Off-state Current (I
neous value of the off-state current that results from the applica-
tion of repetitive peak off-state voltage
Repetitive Peak Off-state Voltage (V
neous value of the off-state voltage which occurs across a thyris-
tor, including all repetitive transient voltages and excluding all
non-repetitive transient voltages
Repetitive Peak Reverse Current of an SCR (I
instantaneous value of the reverse current resulting from the
application of repetitive peak reverse voltage
Repetitive Peak Reverse Voltage of an SCR (V
instantaneous value of the reverse voltage which occurs across
the thyristor, including all repetitive transient voltages and exclud-
ing all non-repetitive transient voltages
Surge (Non-repetitive) On-state Current (I
rent of short-time duration and specified waveshape
Thermal Resistance, Junction to Ambient (R
difference between the thyristor junction and ambient divided by
the power dissipation causing the temperature difference under
conditions of thermal equilibrium
Note: Ambient is the point at which temperature does not change
as the result of dissipation.
Thermal Resistance, Junction to Case (R
ference between the thyristor junction and the thyristor case
divided by the power dissipation causing the temperature differ-
ence under conditions of thermal equilibrium
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Minimum value of the rate-of-rise of principal voltage
H
T
)
L
T
) –
) –
) –
–
Minimum principal current required to
GT
Principal current when the thyristor is in
Minimum principal current required to
GT
Principal voltage when the thyristor is in
) –
) –
Minimum gate current required to
Gate voltage required to produce
gt
GM
) –
) –
DRM
DRM
Time interval between a
Maximum power which
) –
) –
Maximum instanta-
TSM
Maximum instanta-
JC
) –
) –
JA
RRM
RRM
Temperature dif-
) –
On-state cur-
Maximum
) –
) –
Temperature
Maximum
Maximum
AN1001 - 6
©2002 Teccor Electronics
Thyristor Product Catalog
Application Notes