PRHMB100B12A_1 Nihon Inter Electronics (NIEC), PRHMB100B12A_1 Datasheet - Page 2

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PRHMB100B12A_1

Manufacturer Part Number
PRHMB100B12A_1
Description
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheet
PRHMB100B12A
50000
20000
10000
5000
2000
1000
200
150
100
500
200
100
50
16
14
12
10
50
0
8
6
4
2
0
0.1
0
0
Fig.5- Capacitance vs. Collector to Emitter Voltage
0.2
V
GE
15V
=20V
Fig.3- Collector to Emitter On Voltage
Fig.1- Output Characteristics
2
4
0.5
Collector to Emitter Voltage V
Collector to Emitter Voltage V
vs. Gate to Emitter Voltage
Gate to Emitter Voltage V
I
C
=50A
100A
1
12V
2
4
8
5
200A
12
10
6
GE
(Typical)
20
CE
CE
(Typical)
(V)
(V)
(V)
16
8
50
日本インター株式会社
(Typical)
T
V
f=1MH
T
C
T
100
C
=125℃
GE
C
=25℃
=25℃
=0V
Coes
Cres
Cies
10V
7V
8V
9V
Z
200
10
20
800
700
600
500
400
300
200
100
1.6
1.4
1.2
0.8
0.6
0.4
0.2
16
14
12
10
8
6
4
2
0
0
1
0
0
0
0
Fig.4- Gate Charge vs. Collector to Emitter Voltage
R
T
t
t
OFF
C
t
L
t
ON
=6Ω
=25℃
r
Fig.6- Collector Current vs. Switching Time
f
Fig.2- Collector to Emitter On Voltage
150
4
vs. Gate to Emitter Voltage
25
Gate to Emitter Voltage V
Total Gate Charge Qg
I
100A
C
Collector Current I
=50A
300
8
50
V
CE
200A
=600V
450
400V
12
200V
C
(nC)
(A)
GE
(Typical)
(V)
75
600
(Typical)
16
V
R
V
T
C
CC
G
GE
=25℃
=10Ω
=±15V
=600V
T
(Typical)
C
=25℃
750
100
20
16
14
12
10
8
6
4
2
0

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