CM100DUS-12F_11 MITSUBISHI, CM100DUS-12F_11 Datasheet - Page 3

• Manufacturer Part Number: CM100DUS-12F_11
• Manufacturer: MITSUBISHI

RECOMMENDED OPERATING CONDITIONS (T
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T
Note.3: Case temperature (T
Note.4: Pulse width and repetition rate should be such that the device junction temperature (T
Note.5: Junction temperature (T
Note.6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: Base plate flatness measurement points are as in the following figure.
CHIP LOCATION
V
V
R
GEon
C C
G
Symbol
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R
(Refer to the figure of test circuit)
Bottom
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Bottom
(Top view)
C
C
Item
) measured point is base plate side. (Refer to the figure of chip location)
') and heat sink temperature (T
X
j
Bottom
) should not increase beyond T
-: Concave
+: Convex
Y
t h ( s - a )
} should measure just under the chips.
Tr1/Tr2: IGBT, Di1/Di2: FWDi
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
a
s
3 mm
3 mm
3 mm
=25 °C)
') are defined on the each surface of base plate and heat sink
3
j m a x
Conditions
rating.
Case Temperature (T
measured point
(Base plate side)
CM100DUS-12F
MITSUBISHI IGBT MODULES
HIGH POWER SWITCHING USE
13.5
Min.
6.3
j
-
) dose not exceed T
Dimension in mm, tolerance: ±1 mm
Limits
Typ.
15.0
300
-
INSULATED TYPE
C
)
Max.
16.5
February-2011
400
63
j m a x
rating.
Unit
V
Ω