CM100DUS-12F_11 MITSUBISHI, CM100DUS-12F_11 Datasheet - Page 2

• Manufacturer Part Number: CM100DUS-12F_11
• Manufacturer: MITSUBISHI

ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
THERMAL RESISTANCE CHARACTERISTICS
R
R
R
R
R
MECHANICAL CHARACTERISTICS
V
V
I
I
P
P
I
I
T
T
V
I
I
V
V
C
C
C
Q
t
t
t
t
V
t
Q
E
E
E
r
M
M
m
e
C
CRM
E
ERM
C E S
G E S
r r
d ( o n )
r
d ( o f f )
f
g
CES
GES
EC
t h ( j - c ) Q
t h ( j - c ) D
t h ( c - s )
t h ( j - c ' ) Q
t h ( j - c ' ) D
c
j
s t g
G E ( t h )
C E s a t
o n
o f f
r r
t o t
t o t
i s o l
Symbol
Symbol
i e s
o e s
r e s
G
r r
Symbol
t
s
Symbol
'
(Note.1)
(Note.1)
(Note.1)
(Note.1)
(Note.1)
(Note.1)
Thermal resistance
Contact thermal resistance
Thermal resistance
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal gate resistance
Mounting torque
Weight
Flatness of base plate
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
Junction temperature
Storage temperature
Isolation voltage
Item
Item
Item
Item
(Note.2)
(Note.3)
(Note.2)
j
=25 °C, unless otherwise specified)
j
=25 °C, unless otherwise specified)
G-E short-circuited
C-E short-circuited
T
Pulse, Repetitive
T
T
T
Pulse, Repetitive
-
-
Terminals to base plate, RMS, f=60 Hz, AC 1 min
V
±V
I
I
V
V
V
V
R
I
V
R
V
V
Inductive load
Per switch
Junction to case, per IGBT
Junction to case, per FWDi
Case to heat sink, per 1/2 module,
Thermal grease applied
Junction to case, per IGBT
Junction to case, per FWDi
Main terminals
Mounting to heat sink
-
On the centerline X, Y
C
C
E
C
C
C
C
CE
=10 mA, V
=100 A
GE
CE
CC
CC
G
=100 A
CC
G
CC
GE
=25 °C
=25 °C
'=25 °C
=25 °C
GE
=6.3 Ω, Inductive load
=6.3 Ω, Inductive load
=V
=10 V, G-E short-circuited
=15 V
=300 V, I
=300 V, I
=300 V, I
=300 V, I
=±15 V, R
=V
CES
GES
, G-E short-circuited
, C-E short-circuited
(Note.6)
(Note.6)
(Note.2)
(Note.2, 5)
(Note.2)
(Note.3, 5)
CE
2
C
E
=100 A, V
C
=100 A, V
C
=10 V
Conditions
=100 A, V
=I
G
Conditions
Conditions
=6.3 Ω, T
, G-E short-circuited
E
,
=100 A,
(Note.4)
(Note.4)
Conditions
GE
GE
M 5 screw
M 6 screw
=±15 V,
=15 V
GE
(Note.7)
j
(Note.8)
=125 °C,
=±15 V,
T
T
j
=125 °C
j
=25 °C
CM100DUS-12F
MITSUBISHI IGBT MODULES
HIGH POWER SWITCHING USE
-100
Min.
Min.
Min.
1.7
2.5
3.5
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Limits
Limits
Typ.
1.95
1.55
Typ.
0.07
Typ.
620
310
2.0
2.0
1.9
2.2
1.2
3.0
4.0
6
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-40 ~ +150
-40 ~ +125
Rating
INSULATED TYPE
2500
600
±20
100
200
350
445
100
200
+100
Max.
Max.
Max.
0.35
0.70
0.28
0.40
February-2011
100
300
150
150
2.7
1.8
1.0
2.6
3.5
4.5
20
27
80
1
7
-
-
-
-
-
-
-
-
-
K/W
K/W
K/W
K/W
K/W
N·m
Unit
Unit
Unit
Unit
mA
μm
μA
nC
μC
mJ
°C
nF
ns
ns
W
V
Ω
V
V
A
A
V
V
V
g