IXFN44N50Q IXYS Corporation, IXFN44N50Q Datasheet
IXFN44N50Q
Manufacturer Part Number
IXFN44N50Q
Description
HiPerFET Power MOSFETs Q-Class
Manufacturer
IXYS Corporation
Datasheet
1.IXFN44N50Q.pdf
(2 pages)
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol
V
V
I
I
R
D25
DM
AR
DSS
GSS
J
JM
stg
DGR
AR
AS
D
DSS
GS
GSM
ISOL
DSS
GS(th)
d
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
, di/dt £ 100 A/ms, V
GS
DSS
, I
D
D
DC
D
= 1 mA
= 4 mA
G
, V
= 0.5 I
= 2 W
DS
t = 1 min
t = 1 s
g
= 0
, High dv/dt
D25
GS
= 1 MW
DD
T
T
44N50
48N50
£ V
J
J
(T
DSS
J
= 125°C
= 25°C
= 25°C, unless otherwise specified)
JM
,
IXFN 44N50Q
IXFN 48N50Q
44N50
48N50
44N50
48N50
min.
500
2.0
-55 to +150
-55 to +150
Characteristic Values
1.5/13
1.5/13
Maximum Ratings
2500
3000
typ.
±20
±30
150
500
500
176
192
500
2.5
44
48
48
60
30
5
±100
100
120
100
max.
Nm/lb.in.
Nm/lb.in.
4.0
2
V/ns
mJ
mJ
V~
V~
mW
mW
°C
°C
°C
mA
W
nA
mA
V
V
V
V
A
A
A
A
A
V
V
g
500 V 44 A 120 mW
500 V 48 A 100 mW
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
t
V
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
Fast intrinsic diode
International standard package
miniBLOC with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
£ 250 ns
DSS
E153432
DS (on)
I
D25
G
D = Drain
S
g
process
D
R
98715 (03/30/00)
DS(on)
S
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IXFN44N50Q Summary of contents
Page 1
TM HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Q , High dv/dt g Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...