... FE V 0.15 0.3 CE(sat) V 0.86 1.0 BE(sat) V 0.55 0.62 0. 250 135 to 270 200 to 400 300 to 600 SILICON TRANSISTOR 2SC1623 PACKAGE DIMENSIONS in millimeters 2.8 ± 0.2 +0.1 1.5 0.65 –0. Marking 1: Emitter 2: Base 3: Collector UNIT TEST CONDITIONS 5 6 1.0 mA* ...
... V CE 1000 500 300 = 6.0 V 1.0 V 100 0 100 0.1 0.2 2SC1623 100 120 140 160 - Ambient Temperature - ˚ Collector to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT Pulsed ˚ ˚C –25 ˚C ...
... RATIO AND OUTPUT ADMITTANCE vs. SMALL SIGNAL CURRENT GAIN 100 200 1000 h - Small Signal Current Gain fe 2SC1623 Pulsed · BE(sat · CE(sat 100 - Collector Current - 1.0 MHz 1 2 ...
... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SC1623 M4 94.11 ...