UPA1855GR-9JG-E1 NEC, UPA1855GR-9JG-E1 Datasheet

UPA1855GR-9JG-E1

Manufacturer Part Number

UPA1855GR-9JG-E1

Description

Nch enhancement type MOS FET

Manufacturer

NEC

Datasheet

1.UPA1855GR-9JG-E1.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

driven directly by a 2.5 V power source.

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

The PA1855 features a low on-state resistance and

Can be driven by a 2.5 V power source

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

PA1855GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1855 is a switching device which can be

D13454EJ1V0DS00 (1st edition)

April 1999 NS CP(K)

= 23 m

= 24 m

= 29 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

Note2

= 4.5 V, I

= 4.0 V, I

= 2.5 V, I

D(pulse)

Power TSSOP8

D(DC)

DSS

GSS

stg

PACKAGE

1 %

= 3.0 A)

–55 to +150

= 25°C)

FOR SWITCHING

±6.0

±12

±24

150

2.0

DATA SHEET

x 1.1 mm

MOS FIELD EFFECT TRANSISTOR

°C

3.15 ±0.15

3.0 ±0.1

Gate1

Gate

Protection

Diode

0.27

0.65

PACKAGE DRAWING (Unit : mm)

+0.03

–0.08

0.8 MAX.

0.10 M

Source1

2, 3 :Source1

6, 7 :Source2

Drain1

EQUIVALENT CIRCUIT

:Drain1

:Gate1

:Gate2

:Drain2

Body

Diode

Gate2

Gate

Protection

Diode

1.2 MAX.

6.4 ±0.2

4.4 ±0.1

PA1855

1.0±0.05

0.1±0.05

–3

Source2

Drain2

0.5

0.6

1998, 1999

1.0 ±0.2

0.25

0.1

+0.15

–0.1

Body

Diode

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UPA1855GR-9JG-E1 Summary of contents

Page 1

... Duty Cycle 2. Mounted on ceramic substrate of 5000 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2 125˚ 75˚ 25˚ -25˚ 0.01 0 Drain Current ...

Page 5

SWITCHING CHARACTERISTICS 1000 100 V = 10V 4. 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 6 ...

Page 6

Data Sheet D13454EJ1V0DS00 PA1855 ...

Page 7

Data Sheet D13454EJ1V0DS00 PA1855 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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