UPA1709G-E1 NEC, UPA1709G-E1 Datasheet

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UPA1709G-E1

Manufacturer Part Number
UPA1709G-E1
Description
Nch enhancement type power MOS FET
Manufacturer
NEC
Datasheet
1.UPA1709G-E1.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UPA1709G-E1
Manufacturer:
NEC
Quantity:
5 382
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
UPA1709G-E1
Manufacturer:
NEC
Quantity:
2 500
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UPA1709G-E1
Manufacturer:
NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
DESCRIPTION
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
switch.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
Low on-resistance
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
iss
G13436EJ1V0DS00 (1st edition)
November 1998 NS CP(K)
PA1709G
= 9.3 m
= 13.8 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
: C
iss
= 1850 pF (TYP.)
10 s, Duty Cycle
(TYP.) (V
(TYP.) (V
Note1
DS
A
GS
= 25°C)
= 0 V)
GS
= 0 V)
GS
= 10 V, I
= 4.5 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note2
1 %
D
A
= 4.5 A)
D
= 25°C, All terminals are connected.)
INDUSTRIAL USE
= 4.5 A)
I
D(pulse)
I
DATA SHEET
V
V
D(DC)
T
T
P
DSS
GSS
SWITCHING
stg
ch
T
2
x 0.7 mm
–55 to + 150
MOS FIELD EFFECT TRANSISTOR
PACKAGE DRAWING (Unit : mm)
±9.0
±25
±36
150
2.0
40
8
1
5.37 Max.
1.27
0.40
+0.10
–0.05
0.78 Max.
5
4
°C
°C
W
V
V
A
A
0.12 M
1,2,3
4
5,6,7,8
EQUIVARENT CIRCUIT
0.5 ±0.2
Gate
Gate
Protection
Diode
6.0 ±0.3
; Source
; Gate
; Drain
4.4
PA1709
Source
Drain
©
0.8
0.10
Body
Diode
1998

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UPA1709G-E1 Summary of contents

Page 1

... Duty Cycle 2. Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form Duty Cycle °C, All terminals are connected.) A SYMBOL TEST CONDITIONS 4.5 A DS(on 4 4.5 A DS(on GS(off ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = -50 ˚C A -25 ˚C 25 ˚ ˚C 125 ˚C 1 150 ˚C ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 100 150 - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...

Page 6

PA1709 ...

Page 7

PA1709 7 ...

Page 8

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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