CY7C1350-133AC Cypress Semiconductor Corporation., CY7C1350-133AC Datasheet

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CY7C1350-133AC

Manufacturer Part Number
CY7C1350-133AC
Description
128Kx36 Pipelined SRAM with NoBL Architecture
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Features
Selection Guide
NoBLand No Bus Latency are trademarks of Cypress Semiconductor Corporation.
ZBT is a trademark of Integrated Device Technology.
Cypress Semiconductor Corporation
Logic Block Diagram
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
• Pin compatible and functionally equivalent to ZBT™ de-
• Supports 143-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined
• Byte Write capability
• 128K x 36 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100 TQFP package
• Burst Capability — linear or interleaved burst order
• Low standby power (17.325 mW max.)
vices IDT71V546, MT55L128L36P, and MCM63Z736
the need to use OE
operation
— Data is transferred on every clock
— 4.0 ns (for 143-MHz device)
— 4.2 ns (for 133-MHz device)
— 5.0 ns (for 100-MHz device)
— 7.0 ns (for 80-MHz device)
ADV/LD
BWS
A
MODE
128Kx36 Pipelined SRAM with NoBL™ Architecture
OE
CLK
CEN
[16:0]
WE
CE 1
CE 2
CE
[3:0]
3
17
and WRITE
CONTROL
LOGIC
3901 North First Street
Commercial
Commercial
17
7C1350-143
Functional Description
The CY7C1350 is a 3.3V, 128K by 36 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1350 is equipped with the advanced No
Bus Latency™ (NoBL™) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of the SRAM, especially in systems that require frequent
Write/Read transitions. The CY7C1350 is pin/functionally
compatible to ZBT™ SRAMs IDT71V546, MT55L128L36P,
and MCM63Z736.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal, which
when deasserted suspends operation and extends the previ-
ous clock cycle. Maximum access delay from the clock rise is
4.0 ns (143-MHz device).
Write operations are controlled by the four Byte Write Select
(BWS
ducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
.
CE
128Kx36
MEMORY
450
4.0
5
ARRAY
Data-In REG.
[3:0]
Q
D
) and a Write Enable (WE) input. All writes are con-
36
San Jose
7C1350-133
36
400
4.2
5
36
CA 95134
7C1350-100
36
350
5.0
DQ
5
DP
1
[31:0]
, CE
[3:0]
CY7C1350
2
August 9, 1999
, CE
408-943-2600
7C1350-80
3
300
7.0
) and an
5

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CY7C1350-133AC Summary of contents

Page 1

... The CY7C1350 is a 3.3V, 128K by 36 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1350 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle ...

Page 2

... DDQ DDQ 100-Pin TQFP CY7C1350 2 CY7C1350 DDQ DDQ ...

Page 3

... When left floating MODE will default HIGH inter- leaved burst order. Power supply inputs to the core of the device. Should be connected to 3.3V power supply. Power supply for the I/O circuitry. Should be connected to a 3.3V power supply. 3 CY7C1350 controls DQ and DP , BWS 0 [7:0] ...

Page 4

... Read/Modify/Write sequences, which can be reduced to sim- ple byte write operations. Because the CY7C1350 is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before present- ing data to the DQ three-state the output drivers ...

Page 5

... Burst Write Accesses The CY7C1350 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four WRITE operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial ad- dress, as described in the Single Write Access section above. ...

Page 6

... BWS . Bytes not selected during byte writes remain unaltered. All x [3:0] 6 CY7C1350 BWS BWS BWS ...

Page 7

... V > V – 0.3V DDQ , Device Deselected, or 7.0-ns cycle, 143 MHz DD 0. > V – 0. DDQ 7.5-ns cycle, 133 MHz = 1/t MAX CYC 10.0-ns cycle, 100 MHz 12.5-ns cycle, 80 MHz 7 CY7C1350 Ambient [10] Temperature DDQ 0°C to +70°C 3.3V ± 5% Min. Max. 3.135 3.465 3.135 3.465 2.4 0.4 2.0 V 0.3V DD ...

Page 8

... AC Test Loads. Test Conditions T = 25° MHz 3.3V 3.3V DDQ R=317 3.3V OUTPUT 5 pF R=351 GND INCLUDING JIG AND SCOPE 1350-2 (b) Test Conditions Symbol 8 CY7C1350 Max. Unit [13] ALL INPUT PULSES 3.0V TQFP Typ. Units Notes ...

Page 9

... This parameter is sampled and not 100% tested. [13, 14, 15] -143 Min. Max. Min. 7.0 7.5 2.0 3.0 2.0 3.0 2.0 2.0 0.5 0.5 4.0 1.5 1.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 1.7 1.7 0.5 0.5 2.0 2.0 0.5 0.5 1.5 3.5 1.5 1.5 1.5 [12, 14, 15, 16] 4.0 [12, 14, 15, 16 4.0 is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same EOLZ CHZ CLZ 9 CY7C1350 -133 -100 -80 Max. Min. Max. Min. Max. 10 12.5 4.0 4.0 4.0 4.0 2.2 2.5 0.5 1.0 4.2 5.0 7.0 1.5 1.5 2.2 2.5 0.5 1.0 2.2 2.5 0.5 1.0 2.2 2.5 0.5 1.0 2.0 2.5 0.5 1.0 2.2 2.5 0.5 1.0 3.5 1.5 3.5 1.5 5.0 1.5 1.5 4.2 5.0 7 4.2 5.0 7 ...

Page 10

... Q3 In Out Out define a write cycle (see Write Cycle Description table). [3: and CE . All chip enables need to be active in order to select DON’T CARE = UNDEFINED 10 CY7C1350 t t CENH CENS CEN HIGH blocks all synchronous inputs RA7 t CHZ Out Out ...

Page 11

... AH AS WA2 CHZ Q1+2 Q1+3 Q1+1 Out Out Out define a write cycle (see Write Cycle Description table). [3: and CE . All chip enables need to be active in order to select UNDEFINED = DON’T CARE 11 CY7C1350 RA3 t CLZ D2+2 D2+3 D2 input signals. [3:0] Q3 Out ...

Page 12

... Switching Waveforms (continued) OE Timing Ordering Information Speed (MHz) Ordering Code 143 CY7C1350-143AC 133 CY7C1350-133AC 100 CY7C1350-100AC 80 CY7C1350-80AC Document #: 38 00690– EOHZ Three-state I/O’s t EOLZ Package Name Package Type A101 100-Lead ( 1.4 mm) Thin Quad Flat Pack A101 100-Lead ( 1.4 mm) Thin Quad Flat Pack A101 100-Lead ( ...

Page 13

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1350 51-85050-A ...

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