BSC059N03S Infineon Technologies AG, BSC059N03S Datasheet
BSC059N03S
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BSC059N03S Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot C T =25 ° =45 K/W thJA stg page 1 BSC059N03S P-TDSON-8 Value Unit 17.5 200 150 mJ 6 kV/µs ± 2.8 -55 ... 150 °C 55/150/56 2004-04-13 ...
Page 2
... GSS =4 =50 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSC059N03S Values Unit typ. max 2.6 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 6.9 8 ...
Page 3
... = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 BSC059N03S Values Unit typ. max. - 2010 2670 pF - 720 950 - 93 140 - 5.7 8 4.8 7 3.8 5.7 - 6.3 8 3.2 4.3 - 4.0 6 ...
Page 4
... Max. transient thermal impedance Z =f(t ) thJC p parameter µs 10 µs 0 100 µs 1 0 0.1 0.02 0.01 single pulse -2 10 0.01 10 100 page 4 BSC059N03S 40 80 120 160 T [° [s] p 2004-04-13 ...
Page 5
... GS 25 2 3 Typ. forward transconductance g =f =25 ° 100 ° page 5 BSC059N03S 4 V 3.7 V 3 100 I [ [A] D 2004-04-13 ...
Page 6
... D 2.5 2 1.5 1 0.5 0 100 140 180 -60 -20 12 Forward characteristics of reverse diode I =f parameter page 6 BSC059N03S =V DS 350 µA 35 µ 100 140 180 T [°C] j 150 °C 25 °C 150°C, 98% 25°C, 98% 0.4 0.8 1.2 1.6 V [V] SD 2004-04-13 ...
Page 7
... Rev. 1.2 14 Typ. gate charge V =f =25 A pulsed GS gate D parameter ° 100 1000 0 16 Gate charge waveforms s(th (th 100 140 180 page 7 BSC059N03S [nC] gate gate 2004-04-13 ...
Page 8
... Package Outline P-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.2 page 8 BSC059N03S 2004-04-13 ...
Page 9
... Package Outline P-TDSON-8: Tape Dimensions in mm Rev. 1.2 page 9 BSC059N03S 2004-04-13 ...
Page 10
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 10 BSC059N03S 2004-04-13 ...