IPB10N03L Infineon Technologies AG, IPB10N03L Datasheet
IPB10N03L
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IPB10N03L Summary of contents
Page 1
... DS(on) Ordering Code Symbol puls jmax AR dv/dt =175°C jmax tot Page 1 IPP10N03L IPB10N03L Product Summary 8.9 max. SMD version DS(on TO263 -3-2 P- TO220 -3-1 Marking 10N03L 10N03L Value 73 63 292 ±20 107 -55... +175 ...
Page 2
... Diagrams are related to straight lead versions Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on DS(on) = 1.4K/W the chip is able to carry I thJC Page 2 IPP10N03L IPB10N03L Values Unit min. typ. max. - 0.9 1.4 K Values Unit min. typ. max 1.2 1.6 2 µ ...
Page 3
... GS V (plateau) V =15V, I =36A =25° =0V, I =73A =15V /dt=100A/µ Page 3 IPP10N03L IPB10N03L Values Unit min. typ. max 1290 1710 pF - 500 670 - 130 190 - 1 7.7 11 31 ...
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... IPP10N03L 10 K 1.8µ µ 100 µ Page 4 IPP10N03L IPB10N03L ) 100 120 140 160 ) 0.50 single pulse - 2003-01-17 190 ° 0.20 ...
Page 5
... Typ. forward transconductance g = f(I DS(on)max fs parameter Page 5 IPP10N03L IPB10N03L = IPP10N03L [ 3.5 4.0 4.5 5.0 5.5 6.0 10 100 ); T =25° ...
Page 6
... Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 IPP10N03L IPB10N03L = 0,9mA 2 1 60µA 0 -60 - 100 ) µ IPP10N03L °C typ 175 ° ...
Page 7
... V DS max 0 max Drain-source breakdown voltage V (BR)DSS = 25 parameter 125 145 185 ° Gate Page 7 IPP10N03L IPB10N03L = = IPP10N03L -60 - 100 140 2003-01-17 °C 200 T j ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Page 8 IPP10N03L IPB10N03L 2003-01-17 ...