IPB15N03L Infineon Technologies AG, IPB15N03L Datasheet

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IPB15N03L

Manufacturer Part Number
IPB15N03L
Description
Manufacturer
Infineon Technologies AG
Datasheet

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OptiMOS
Feature
Type
IPP15N03L
IPB15N03L
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
Superior thermal resistance
N-Channel
175°C operating temperature
Ideal for fast switching buck converters
Logic Level
Low On-Resistance R
Excellent Gate Charge x R
Avalanche rated
dv/dt rated
=42A, V
=20A, V
=25°C
=25°C
=25°C
DS
DD
=-V, di/dt=200A/µs, T
=25V, R
Buck converter series
GS
=25
Package
P- TO220 -3-1 Q67042-S4039
P- TO263 -3-2 Q67040-S4344
DS(on)
1)
j
= 25 °C, unless otherwise specified
DS(on)
jmax
=175°C
product (FOM)
Ordering Code
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
Product Summary
V
R
I
stg
D
P- TO263 -3-2
DS
DS(on)
Marking
15N03L
15N03L
max. SMD version
-55... +175
55/175/56
Value
±20
168
42
42
20
83
8
6
P- TO220 -3-1
IPB15N03L
IPP15N03L
2003-01-17
12.6
30
42
Unit
A
mJ
kV/µs
V
W
°C
V
m
A

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IPB15N03L Summary of contents

Page 1

... Ordering Code Marking 15N03L 15N03L Symbol puls jmax AR dv/dt =175° tot stg Page 1 IPP15N03L IPB15N03L 30 V 12.6 m max. SMD version TO220 -3-1 Value Unit 168 kV/µs V ± °C -55... +175 55/175/56 2003-01-17 ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS V DS GS(th) I DSS I GSS R DS(on) R DS(on) = 1.8K/W the chip is able to carry I thJC Page 2 IPP15N03L IPB15N03L Values Unit min. typ. max. - 1.2 1.8 K Values Unit min. typ. max 1.2 1.6 2 µ ...

Page 3

... DS D oss V = (plateau) V =15V, I =21A =25° =0V, I =42A =- /dt=100A/µ Page 3 IPP15N03L IPB15N03L Values Unit min. typ. max 850 1130 pF - 330 330 - 90 130 - 6.5 9 14.5 21.8 - 2.7 3 7.4 9 ...

Page 4

... IPP15N03L 10 K 8.8µs 10 µ 100 µ single pulse Page 4 IPP15N03L IPB15N03L 100 120 140 160 °C 190 0.50 0.20 0.10 0.05 0.02 0. 2003-01-17 ...

Page 5

... Typ. forward transconductance parameter Page 5 IPP15N03L IPB15N03L ) 4.0 4.5 5.0 5.5 6 =25° 100 ...

Page 6

... F SD parameter IPP15N03L iss oss C rss 0 Page 6 IPP15N03L IPB15N03L = 0.8mA 40uA - 100 180 ° µ °C typ 175 °C typ °C (98 175 °C (98 0.8 1.2 1 ...

Page 7

... DS max 0 max Drain-source breakdown voltage (BR)DSS = 25 parameter IPP15N03L 145 °C 185 -60 - Gate Page 7 IPP15N03L IPB15N03L ) j = 100 140 °C 200 T j 2003-01-17 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Page 8 IPP15N03L IPB15N03L 2003-01-17 ...

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