CY7C1361A-117AI Cypress Semiconductor Corporation., CY7C1361A-117AI Datasheet

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CY7C1361A-117AI

Manufacturer Part Number
CY7C1361A-117AI
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05259 Rev. *A
Features
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
triple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high-valued
resistors.
The CY7C1361A and CY7C1363A SRAMs integrate 262,144
× 36 and 524,288 × 18 SRAM cells with advanced
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
• Fast access times: 6.0, 6.5, 7.0, and 8.0ns
• Fast clock speed: 150, 133, 117, and 100MHz
• Fast OE access times: 3.5 ns and 4.0 ns
• Optimal for depth expansion (one cycle chip deselect
• 3.3V –5% and +10% power supply
• 3.3V or 2.5V I/O supply
• 5V tolerant inputs except I/Os
• Clamp diodes to V
• Common data inputs and data outputs
• Byte Write Enable and Global Write control
• Multiple chip enables for depth expansion: A package
• Address pipeline capability
• Address, data, and control registers
• Internally self-timed Write cycle
• Burst control pins (interleaved or linear burst
• Automatic power-down feature available using ZZ
• JTAG boundary scan for BG and AJ package version
• Low-profile 119-bump 14-mm × 22-mm PBGA (Ball Grid
to eliminate bus contention)
version and two chip enables for BG and AJ package
versions
sequence)
mode or CE deselect.
Array) and 100-pin TQFP packages
SS
at all inputs and outputs
7C1361A-150
7C1363A-150
3901 North First Street
480
6.0
10
256K x 36/512K x 18 Synchronous
7C1361A-133
7C1363A-133
synchronous peripheral circuitry and a two-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), depth-expansion
Chip Enables (CE
ADSP, and ADV), Write Enables (BWa, BWb, BWc, BWd, and
BWE), and global Write (GW). However, the CE
input is only available for the TA package version.
Asynchronous inputs include the Output Enable (OE) and
burst mode control (MODE). The data outputs (Q), enabled by
OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BWa
controls DQa. BWb controls DQb. BWc controls DQc. BWd
controls DQd. BWa, BWb, BWc, and BWd can be active only
with BWE being LOW. GW being LOW causes all bytes to be
written. The x18 version only has 18 data inputs/outputs (DQa
and DQb) along with BWa and BWb (no BWc, BWd, DQc, and
DQd).
For the B and T package versions, four pins are used to
implement JTAG test capabilities: Test Mode Select (TMS),
Test Data-In (TDI), Test Clock (TCK), and Test Data-Out
(TDO). The JTAG circuitry is used to serially shift data to and
from the device. JTAG inputs use LVTTL/LVCMOS levels to
shift data during this testing mode of operation. The TA
package version does not offer the JTAG capability.
The CY7C1361A and CY7C1363A operate from a +3.3V
power supply. All inputs and outputs are LVTTL-compatible.
360
6.5
10
San Jose
7C1361A-117
7C1363A-117
Flow-Thru Burst SRAM
320
7.0
2
10
and CE
CA 95134
2
), burst control inputs (ADSC,
7C1361A-100
7C1363A-100
270
8.0
10
Revised June 19, 2002
CY7C1361A
CY7C1363A
408-943-2600
2
chip enable
Unit
mA
mA
ns

Related parts for CY7C1361A-117AI

CY7C1361A-117AI Summary of contents

Page 1

... The JTAG circuitry is used to serially shift data to and from the device. JTAG inputs use LVTTL/LVCMOS levels to shift data during this testing mode of operation. The TA package version does not offer the JTAG capability. The CY7C1361A and CY7C1363A operate from a +3.3V power supply. All inputs and outputs are LVTTL-compatible. 7C1361A-150 7C1361A-133 ...

Page 2

... D Q Input Register Address Register OUTPUT REGISTER CLR D Q Binary Counter & Logic [1] BYTE b WRITE D Q BYTE a WRITE D Q ENABLE Input Register Address Register OUTPUT REGISTER D Q CLR Binary Counter & Logic CY7C1361A CY7C1363A DQa,DQb DQc,DQd DQa,DQb Page ...

Page 3

... DQb 23 DQa 58 DQb CCQ CCQ CY7C1361A CY7C1363A DQb 80 DQb 79 DQb CCQ DQb DQb 74 DQb 73 72 DQb CCQ 69 DQb DQb 100-pin TQFP ...

Page 4

... DQb V CLK DQb V BWE CCQ DQb MODE TMS TDI TCK CCQ CY7C1361A CY7C1363A CCQ DQb DQb SS V DQb DQb SS V DQb V SS CCQ BWb DQb DQb V DQb ...

Page 5

... Linear Burst HIGH on this pin selects Interleaved Burst. ZZ Input- Sleep: This active HIGH input puts the device in Asynchronous low-power consumption standby mode. For normal operation, this input has to be either LOW or NC (No Connect). CY7C1361A CY7C1363A Pin Description Page ...

Page 6

... Write control and burst control inputs on its rising edge. All synchronous inputs must meet set-up and hold times around the clock’s rising edge. CE Input- Chip Enable: This active LOW input is used to enable the Synchronous device and to gate ADSP. CY7C1361A CY7C1363A Pin Description Pin Description ...

Page 7

... Supply Core Power Supply: +3.3V –5% and +10 Ground Ground: GND I/O Power Power Supply for the I/O circuitry CCQ Supply NC – No Connect: These signals are not internally connected. User can leave it floating or connect CY7C1361A CY7C1363A Pin Description Page ...

Page 8

... CY7C1361A CY7C1363A Second Third Fourth Address Address Address (internal) (internal) (internal) A...A01 A...A10 A...A11 A...A10 A...A11 A...A00 A...A11 A...A00 A...A01 A...A00 A...A01 A...A10 Write OE CLK ...

Page 9

... TCK and pre-loads the instruction register with the IDCODE command. This type of reset does not affect the operation of the system logic. The reset affects test logic only. At power-up, the TAP is reset internally to ensure that TDO High-Z state. CY7C1361A CY7C1363A BWb BWc X X ...

Page 10

... TAP controller is in the Capture-DR state, a snap shot of the data in the device’s input and I/O buffers is loaded into the boundary scan register. Because the device system clock(s) are independent from the TAP clock CY7C1361A CY7C1363A Page ...

Page 11

... Do not use these instructions. They are reserved for future use. 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- Figure 1. TAP Controller State Diagram CY7C1361A CY7C1363A SELECT IR-SCAN 0 1 CAPTURE-IR 0 SHIFT-IR 1 EXIT1-IR 0 PAUSE- EXIT2-IR 1 UPDATE- [11] Page ...

Page 12

... I = 100 A OHC [13 8.0 mA OLT [13 8.0 mA OHT /2; undershoot: V (AC) < – 0.5V for t < t KHKH IL KHKH must not exceed V . Control input signals (such as R/W, ADV/LD) may not have pulse widths less than t CC CY7C1361A CY7C1363A 0 Selection Circuitry [12] Min. Max. 2 0.3 CC –0.3 0.8 – ...

Page 13

... Test conditions are specified using the load in TAP AC test conditions. Document #: 38-05259 Rev. *A [16, 17] Over the Operating Range Description THTL t THTH t t MVTH THMX t DVTH t THDX t TLQV t TLQX CY7C1361A CY7C1363A Min. Max ALL INPUT PULSES 3.0V 1.5V 1.5 ns 1.5 ns (b) ...

Page 14

... Do not use these instructions; they are reserved for future use. 111 Places the bypass register between TDI and TDO. This instruction does not affect device operations. CY7C1361A CY7C1363A Description Reserved for revision number. Defines depth of 256K or 512K words. Defines width of x36 or x18 bits. ...

Page 15

... CY7C1361A CY7C1363A (continued) Signal Name TQFP Bump BWa 93 BWb 94 5G BWc 95 3G BWd 100 2A DQc 1 2D ...

Page 16

... CY7C1361A CY7C1363A (continued) Signal Name TQFP Bump ID CLK BWa 93 BWb 100 DQb 8 1D DQb 9 DQb 12 2G DQb 13 1H ...

Page 17

... Max. CLK frequency = 0 CC Description Test Conditions T = 25° MHz 3.3V CC pins should be no greater than 200mV. CC < – 2.0V for t < CY7C1361A CY7C1363A [18] Ambient Temperature 3.3V–5/ +10% – Min. 2 2.0 1.7 –0.3 –0.3 – ...

Page 18

... V = 3.3V 3.5 CCQ V = 2.5V 4.5 CCQ [15, 21, 26] 0 [15, 21, 26] 3.5 [28] 1.5 [28] 0.5 is less than t and t is less than t KQHZ KQLZ OEHZ CY7C1361A CY7C1363A TQFP Typ ALL INPUT PULSES Vcc 90% 10% GND 1 V/ns (c) 133 MHz 117 MHz 100 MHz Min. Max. Min. Max. Min. 7.5 8.5 10 2.5 3.0 3 ...

Page 19

... SINGLE READ , and CE are active CY7C1361A CY7C1363A ...

Page 20

... OEHZ D(A1) D(A2) D(A2+2) BURST WRITE CY7C1361A CY7C1363A ...

Page 21

... Single Write CY7C1361A CY7C1363A ...

Page 22

... Ordering Information Speed (MHz) Ordering Code 150 CY7C1361A-150AJC CY7C1361A-150AC CY7C1361A-150BGC 133 CY7C1361A-133AJC CY7C1361A-133AC CY7C1361A-133BGC 117 CY7C1361A-117AJC CY7C1361A-117AC CY7C1361A-117BGC 100 CY7C1361A-100AJC CY7C1361A-100AC CY7C1361A-100BGC Document #: 38-05259 Rev ZZS I (active Three-state Package Name A101 100-lead 1.4 mm Thin Quad Flat Pack A101 100-lead ...

Page 23

... CY7C1363A-150BGC 133 CY7C1363A-133AJC CY7C1363A-133AC CY7C1363A-133BGC 117 CY7C1363A-117AJC CY7C1363A-117AC CY7C1363A-117BGC 100 CY7C1363A-100AJC CY7C1363A-100AC CY7C1363A-100BGC 133 CY7C1361A-133AJI CY7C1361A-133AI CY7C1361A-133BGI 117 CY7C1361A-117AJI CY7C1361A-117AI CY7C1361A-117BGI 100 CY7C1361A-100AJI CY7C1361A-100AI CY7C1361A-100BGI 133 CY7C1363A-133AJI CY7C1363A-133AI CY7C1363A-133BGI 117 CY7C1363A-117AJI CY7C1363A-117AI CY7C1363A-117BGI 100 CY7C1363A-100AJI CY7C1363A-100AI CY7C1363A-100BGI Document #: 38-05259 Rev. *A Package ...

Page 24

... Package Diagrams 100-lead Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05259 Rev. *A CY7C1361A CY7C1363A 51-85050-A Page ...

Page 25

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 119-ball BGA ( 2.4) BG119 CY7C1361A CY7C1363A 51-85115-*A ...

Page 26

... Document Title:CY7C1361A/CY7C1363A 256K x 36/512K x 18 Synchronous Flow-Thru Burst SRAM Document Number: 38-05259 REV ECN No. Issue Date ** 113847 05/17/02 *A 116225 06/20/02 Document #: 38-05259 Rev. *A Orig. of Description of Change Change GLC New Data Sheet BRI Removed GVT part numbers from title and body of datasheet Corrected CY part numbers in body of datasheet Corrected the read and write timing diagrams Added note 19 (pg ...

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