CY62128DV30LL-55ZAXI Cypress Semiconductor Corporation., CY62128DV30LL-55ZAXI Datasheet

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CY62128DV30LL-55ZAXI

Manufacturer Part Number
CY62128DV30LL-55ZAXI
Description
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05231 Rev. *H
Features
Functional Description
The CY62128DV30 is a high-performance CMOS static RAM
organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Logic Block Diagram
• Very high speed: 55 and 70 ns
• Wide voltage range: 2.2V to 3.6V
• Pin compatible with CY62128V
• Ultra-low active power
• Ultra-low standby power
• Easy memory expansion with CE
• Automatic power-down when deselected
• Available in Pb-free and non Pb-free 32-lead SOIC,
— Typical active current: 0.85 mA @ f = 1 MHz
— Typical active current: 5 mA @ f = f
features
32-lead TSOP and 32-lead Small TSOP, non Pb-free
32-lead Reverse TSOP packages
CE
CE
1
2
[1]
WE
OE
1
, CE
A10
A11
A 1
A 0
A 2
A 3
A 5
A 6
A 8
A 9
A 4
A 7
MAX
2
, and OE
198 Champion Court
Data in Drivers
128K x 8
ARRAY
®
DECODER
COLUMN
) in
also has an automatic power-down feature that significantly
reduces power consumption by 90% when addresses are not
toggling. The device can be put into standby mode reducing
power consumption by more than 99% when deselected Chip
Enable 1 (CE
input/output pins (I/O
high-impedance state when: deselected Chip Enable 1 (CE
HIGH or Chip Enable 2 (CE
HIGH), or during a write operation (Chip Enable 1 (CE
and Chip Enable 2 (CE
Writing to the device is accomplished by taking Chip Enable 1
(CE
(WE) LOW. Data on the eight I/O pins is then written into the
location specified on the Address pin (A
Reading from the device is accomplished by taking Chip
Enable 1 (CE
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O
pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH or CE
during a write operation (CE
LOW).
Power-
down
1
) LOW with Chip Enable 2 (CE
1-Mb (128K x 8) Static RAM
San Jose
2
1
LOW), the outputs are disabled (OE HIGH) or
1
) LOW with Chip Enable 2 (CE
) HIGH or Chip Enable 2 (CE
,
CA 95134-1709
2
0
) HIGH and Write Enable (WE) LOW).
through I/O
2
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
) LOW, outputs are disabled (OE
1
o
LOW, CE
through I/O
Revised June 19, 2006
2
) HIGH and Write Enable
CY62128DV30
7
0
) are placed in a
through A
2
7
HIGH), and WE
) are placed in a
408-943-2600
2
2
) LOW. The
) HIGH and
16
).
1
) LOW
1
1
)
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CY62128DV30LL-55ZAXI Summary of contents

Page 1

Features • Very high speed: 55 and 70 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62128V • Ultra-low active power — Typical active current: 0. MHz — Typical active current: ...

Page 2

... Min. Typ. CY62128DV30L 2.2 3.0 CY62128DV30LL Notes pins are not connected to the die. 3. DNU pins have to be left floating or tied to Vss to ensure proper application. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document #: 38-05231 Rev. *H ...

Page 3

Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential .......................................................... −0.3V to 3.9V DC ...

Page 4

AC Test Loads and Waveforms OUTPUT 50 pF INCLUDING JIG AND SCOPE Parameters Data Retention Characteristics Parameter Description V V for Data Retention Data Retention Current CCDR [4] ...

Page 5

Switching Characteristics (Over the Operating Range) Parameter Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW or CE ACE LOW to Data Valid ...

Page 6

Switching Waveforms (continued) [11, 14, 15] Read Cycle No. 2 (OE Controlled) ADDRESS ACE OE t LZOE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT [12, 16, 17, 18] Write Cycle ...

Page 7

Switching Waveforms (continued) Write Cycle No Controlled ADDRESS DATA I/O Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS DON'T CARE DATA ...

Page 8

... Ordering Information Speed (ns) Ordering Code 55 CY62128DV30L-55SI CY62128DV30LL-55SI CY62128DV30LL-55SXI CY62128DV30L-55ZI CY62128DV30LL-55ZI CY62128DV30LL-55ZXI CY62128DV30L-55ZAI CY62128DV30LL-55ZAI CY62128DV30LL-55ZAXI CY62128DV30L-55ZRI CY62128DV30LL-55ZRI CY62128DV30LL-55ZRXI 70 CY62128DV30L-70SI CY62128DV30LL-70SI CY62128DV30LL-70SXI CY62128DV30L-70ZI CY62128DV30LL-70ZI CY62128DV30LL-70ZXI CY62128DV30L-70ZAI CY62128DV30LL-70ZAI CY62128DV30LL-70ZAXI CY62128DV30L-70ZRI CY62128DV30LL-70ZRI Document #: 38-05231 Rev. *H Package Diagram Package Type 51-85081 32-lead SOIC 51-85081 32-lead SOIC ...

Page 9

Package Diagrams 32 LD (450 Mil) SOIC 16 17 0.793[20.142] 0.817[20.751] 0.101[2.565] 0.111[2.819] 0.050[1.270] BSC. 0.014[0.355] 0.020[0.508] 32-Lead TSOP Type mm) (51-85056) Document #: 38-05231 Rev. *H 32-Lead (450-Mil) SOIC (51-85081) 1 0.546[13.868] 0.566[14.376] 0.440[11.176] DIMENSIONS ...

Page 10

... Package Diagrams (continued) MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks, of Cypress Semiconductor Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05231 Rev. *H © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product ...

Page 11

Document History Page Document Title: CY62128DV30 1-Mb (128K x 8) Static RAM Document Number: 38-05231 Orig. of REV. ECN NO. Issue Date Change ** 117691 08/27/02 *A 127314 5/27/03 *B 128342 07/23/03 *C 129002 08/29/03 *D 347394 See ECN *E ...

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