2SK3511 NEC, 2SK3511 Datasheet
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2SK3511
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2SK3511 Summary of contents
Page 1
... N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Super low on-state resistance 12.5 m MAX DS(on) GS Low 5900 pF TYP. iss iss Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage (V ...
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... V oss MHz rss d(on d(off F(S- di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% ch Data Sheet D15617EJ1V0DS 2SK3511 MIN. TYP. MAX. UNIT 2.0 3.0 4 9.5 12.5 m 5900 pF 810 pF 400 100 1 200 90 10% Wave Form 90% 90 10% 10 Wave Form ...
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... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 10 1 0.1 0.01 10 100 = 25°C) 120 100 150 175 0 100 100 Pulse Width - s Data Sheet D15617EJ1V0DS 2SK3511 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 125 150 175 T - Case Temperature - 83.3˚C/W th(ch-A) = 1.25˚C/W th(ch-C) Single Pulse 10 100 1000 3 ...
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... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V Pulsed 10 1 0.1 0.01 125 175 0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 1000 0 Data Sheet D15617EJ1V0DS 2SK3511 150°C A 75°C 25°C 55° Gate to Source Voltage - 150°C A 75°C 25°C 55°C 0.1 1 ...
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... DRAIN TO SOURCE VOLTAGE 10000 1000 100 MHz 10 200 0 Drain to Source Voltage - V DS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 100 Gate Charge - nC G REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 di/dt = 100 0 Data Sheet D15617EJ1V0DS 2SK3511 Ciss Coss Crss 1 10 100 100 120 1 10 100 - Drain Current - A 5 ...
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... SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1000 100 0.001 0.01 0 Inductive Load - mH 6 160 140 120 100 = 250 Starting T Data Sheet D15617EJ1V0DS 2SK3511 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 125 150 - Starting Channel Temperature - C ch ...
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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15617EJ1V0DS 2SK3511 4.8 MAX. 1.3±0.2 2.8±0.2 0.5±0.2 2 ...
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... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3511 The M8E 00. 4 ...