BUK9222-55A NXP Semiconductors, BUK9222-55A Datasheet
BUK9222-55A
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BUK9222-55A Summary of contents
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... TrenchMOS™ logic level FET Rev. 01 — 17 April 2001 M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK9222-55A in SOT428 (D-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: ...
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... D Conditions Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load starting Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET Typ Max Unit 103 W 175 Min Max Unit [1] 193 A 103 W 55 +175 C 55 +175 193 A 160 mJ © Philips Electronics N.V. 2001. All rights reserved. ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08223 Product specification I der 03aa16 (%) 150 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature. R DSon = D.C. 10 Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET 03aa24 120 100 100 125 150 175 4 ...
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... Single Shot Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08223 Product specification Conditions Figure Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET Value Unit 71.4 K/W 1.5 K (s) © Philips Electronics N.V. 2001. All rights reserved. ...
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... 175 4 = MHz; Figure 1 measured from drain to centre of die measured from source lead to source bond pad Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET Typ Max Unit 2 500 A 2 100 1660 2210 pF 290 346 pF 194 266 pF ...
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... Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET Min Typ Max 0.85 1 DSon ( ( ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nc88 C (pF ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET 03aa36 ( min typ max 0.5 1 1.5 2 2.5 ...
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... Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 120 I S (A) 100 175 0.0 0.5 1 (V) Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET 03nc87 14V 44V (nC 03nc86 1.5 © Philips Electronics N.V. 2001. All rights reserved ...
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... REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET max. min. 0.7 10.4 2.95 0.5 0.2 0.5 9.6 2.55 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010417 - Product specification; initial version. 9397 750 08223 Product specification Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET © Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET performance. Philips Semiconductors assumes © ...
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... United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA72) Rev. 01 — 17 April 2001 BUK9222-55A TrenchMOS™ logic level FET © Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 April 2001 Document order number: 9397 750 08223 Printed in The Netherlands BUK9222-55A TrenchMOS™ logic level FET ...