EC21QS10 Nihon Inter Electronics (NIEC), EC21QS10 Datasheet

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EC21QS10

Manufacturer Part Number
EC21QS10
Description
100 V, diode
Manufacturer
Nihon Inter Electronics (NIEC)
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EC21QS10-TE12L
Manufacturer:
NIEC
Quantity:
30 000
Part Number:
EC21QS10-TE12L
Quantity:
315
Part Number:
EC21QS10-TE12R
Manufacturer:
NIEC
Quantity:
30 000
2A Avg.
(A)
(A)
(W)
■最大定格 Maximum Ratings
■電気的・熱的特性 Electrical/ Thermal Characteristics
■定格・特性曲線
く り 返 し ピ ー ク 逆 電 圧
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
R.M.S. Forward Current
Surge Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
*アルミナ基板実装/Alumina Substrate mounted (Soldering Lands= 2 × 2 mm , Both Sides)
0.5
0.2
60
50
40
30
20
10
10
0.8
0.6
0.4
0.2
5
2
1
0
0
0.02
0
0
Item
Item
0.02s
0.2
20
0.05
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
サ ー ジ 順 電 流 定 格
AVERAGE REVERSE POWER DISSIPATION
平 均 逆 電 力 損 失
INSTANTANEOUS FORWARD VOLTAGE (V)
FORWARD CURRENT VS. VOLTAGE
瞬 時 順 電 圧 (V)
0.4
40
0.1
I FSM
順 電 圧 特 性
SURGE CURRENT RATINGS
逆 電 圧 (V)
REVERSE VOLTAGE (V)
時 間 (s)
FIG.1
FIG.4
FIG.7
TIME (s)
0.6
0.2
60
Symbol
Symbol
I
R
R
V
F(RMS)
I
V
T
100
I
T
th(j-a)
th(j-l)
FSM
I
0.8
RRM
RM
80
HALF SINE WAVE
FM
stg
O
jw
0.5
RECT 300
RECT 240
RECT 180
D.C.
1.0
100
Tj=150 C
1
Tj=25 C
50Hz、正弦半波通電抵抗負荷
50Hz Half Sine Wave Resistive Load
EC21QS10
EC21QS10
EC21QS10
Volts
1.2
120
2
(W)
(A)
(pF)
接 合 部 ・ リ ー ド 間
Junction to Ambient
接 合 部 ・ 周 囲 間
50
Junction to Lead
CONDUCTION ANGLE
CONDUCTION ANGLE
0
0
通流角
通流角
200
100
2.4
2.0
1.6
1.2
0.8
0.4
2.4
2.0
1.6
1.2
0.8
0.4
50
20
10
50Hz正弦半波,1サイクル,非くり返し
50Hz Half Sine Wave,1cycle, Non-repetitive
0
0
180
180
0.5
0
0
D.C.
RECT 180
RECT 120
RECT 60
1
平 均 順 電 流 − 周 囲 温 度 定 格
−40∼+150
−40∼+150
0.5
Conditions
Alumina Substrate mounted(Soldering Land=2×2mm),V
T
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE
25
HALF SINE WAVE
j
T
=25℃, V
平 均 順 電 力 損 失 特 性
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
2
j
Tj=25 C,Vm=20mV
=25℃, I
3.14
AVERAGE FORWARD POWER DISSIPATION
100
SBD
1.0
RECT 60
Conditions
Tl:lead Temperature
接 合 容 量 特 性
平 均 順 電 流 (A)
50
AVERAGE FORWARD CURRENT (A)
Ta=25℃
周 囲 温 度 (℃)
AMBIENT TEMPERATURE ( C)
263
逆 電 圧 (V)
5
REVERSE VOLTAGE (V)
Tl=106℃
HALF SINE WAVE
1.5
RECT 120
RMS
FIG.2
FIG.5
FIG.8
RM
, f=100kHz, Typical Value
Alumina Substrate Mounted
FM
75
10
RECT 180
=V
2.0
=2A
20
RRM
100
2.5
RM
=100V
50
125
3.0
D.C.
1.3
2.0
100
EC21QS10
EC21QS10
EC21QS10
150
200
3.5
(A)
(mA)
Unit
CONDUCTION ANGLE
V
A
A
A
A
0
通流角
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
0
5
2
180
0
0
D.C.
RECT 180
HALF SINE WAVE
RECT 120
RECT 60
■OUTLINE DRAWING(mm)
■APPROX. NET WEIGHT:0.06 g
Min.
平 均 順 電 流 − リ ー ド 温 度 定 格
25
20
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
AVERAGE FORWARD CURRENT VS. LEAD TEMPERATURE
ピーク逆電流 − ピーク逆電圧特性
ピ ー ク 逆 電 圧 (V)
リ ー ド 温 度 (℃)
50
40
Typ.
EC21QS10
PEAK REVERSE VOLTAGE (V)
LEAD TEMPERATURE ( C)
Tj= 150 C
FIG.3
FIG.6
V
RM
75
60
=100V
Max.
0.85
108
23
1
100
80
℃/W
℃/W
Unit
125
mA
100
V
EC21QS10
EC21QS10
150
120

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