P2HM1102H Nihon Inter Electronics (NIEC), P2HM1102H Datasheet

P2HM1102H

Manufacturer Part Number

P2HM1102H

Description

MOS

Manufacturer

Nihon Inter Electronics (NIEC)

Datasheet

1.P2HM1102H.pdf (3 pages)

Specifications of P2HM1102H

Maxisimam Operating Junction Temperature( C )

150

Storage Temperature( C )

-40 to +125

Circuit

Dual Arms

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Bonase Electronics (HK) Co., Limited

Part Number:

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MOSFET

Drain-Source Voltage (V

Gate - Source Voltage

Continuous Drain Current

Pulsed Drain Current

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Isolation Voltage Terminals to Base AC, 1 min.)

Mounting Torque

Zero Gate Voltage Drain Current

Gate-Source Threshold Voltage

Gate-Source Leakage Current

Static Drain-Source On-Resistance

Drain-Source On-Voltage

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Continuous Source Current

Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Heatsink

MAXMUM RATINGS

ELECTRICAL CHARACTERISTICS

FREE WHEELING DIODES RATINGS & CHARACTERISTICS

THERMAL CHARACTERISTICS

FEATURES

* Dual MOS FETs Separated Circuit

* Prevented Body Diodes of MOSFETs by

* 300KHz High Speed Switching Possible

TYPICAL APPLICATIONS

* Power Supply for the Communications and

the Induction Heating

SBDs, and Ultra Fast Recovery Diodes

Connected in Parallel

Characteristic

MODULE

Module Base to Heatsink

Bus Bar to Main Terminals

Ratings

=0V)

Duty=50%

Symbol

D.C.

Dual 110A /500V

th(j-c)

th(c-f)

(@Tc=25 C unless otherwise noted)

D.C.

=110A

=110A, -dis/dt=100A/

MOS FET

Diode

Mounting surface flat, smooth, and greased

Symbol

DS(on)

d(off)

DS(on)

GS(th)

d(on)

DSS

GSS

oss

ies

rss

DSS

GSS

TOR

ISO

stg

Test Condition

=125 C, V

=55A

= 5 ohm

Circuit

=+/- 10V,V

=10V, I

=15V, I

=25V,V

= -5V, +10V

= 1/2V

DSS

Test Condition

, I

DSS

=5mA

=55A

=0V,f=1MHz

=0V

(Tc=25 C)

OUTLINE DRAWING

=0V

DSS

=0V

P2HM1102H

110 (Tc=25 C)

220 Tc=25 C)

420 Tc=25 C)

-40 to +150

-40 to +125

80 (Tc=25 C)

+/ - 10

2000

250

3.0

2.0

Min.

2.0

Typ.

0.15

108.0

Typ.

Approximate Weight : 220g

0.36

140

200

230

3.3

2.2

2.3

P2HM1102H

Max.

0.30

Max.

220

1.4

2.0

0.1

1.0

4.0

0.3

2.4

Dimension(mm)

m-ohm

Unit

N m

Unit

C/W

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P2HM1102H Summary of contents

Page 1

... Symbol Test Condition MOS FET R th(j-c) Diode R Mounting surface flat, smooth, and greased th(c-f) P2HM1102H P2HM1102H P2HM1102H P2HM1102H OUTLINE DRAWING 108.0 Approximate Weight : 220g P2HM1102H 250 +/ - 10 110 (Tc= (Tc=25 C) 220 Tc=25 C) 420 Tc=25 C) -40 to +150 -40 to +125 2000 3.0 2.0 Min. Typ. =0V - ...

Page 2

... P2HM1102H 108.0 ...

Page 3

Fig. 1 Typical Output Characteristics T =25℃ 250μs Pulse Test C 240 V =10V 200 GS 8V 160 7V 120 DRAIN TO SOURCE VOLTAGE V (V) DS Fig. 4 Typical ...

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