BFP420H6327XT Infineon Technologies, BFP420H6327XT Datasheet - Page 8

• Manufacturer Part Number: BFP420H6327XT
• Manufacturer: Infineon Technologies

Specifications of BFP420H6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 4.5V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 60
• Power Dissipation: 160mW
• Frequency (max): 25GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

Noise figure F =
V
Noise figure F =
V
CE
CE
dB
dB
= 2 V, Z
2.5
1.5
0.5
= 2 V, Z
1.5
0.5
4
3
2
1
0
3
2
1
0
0
0
4
1
S
S
8
= Z
= Z
12
Sopt
Sopt
2
( I
( f )
C
16
)
3
20
IC = 20 mA
IC = 5 mA
24
4
f = 6 GHz
f = 5 GHz
f = 4 GHz
f = 3 GHz
f = 2.4 GHz
f = 1.8 GHz
f = 0.9 GHz
28
GHz
32 mA 38
I
f
C
6
8
Noise figure F =
V
Source impedance for min.
noise figure vs. frequency
V
CE
CE
dB
= 2 V, f = 1.8 GHz
1.5
0.5
= 2 V, I
0
3
2
1
0
+j10
-j10
0
4
+j25
10
-j25
C
= 5 mA / 20 mA
8
4GHz
5GHz
25
3GHz
12
( I
6GHz
C
2.4GHz
16
)
50
+j50
-j50
1.8GHz
20
100
0.9GHz
24
2007-04-20
ZS = 50 Ohm
ZS = ZSopt
0.45GHz
28 mA
BFP420
+j100
-j100
I
C
36