BUZ73AH Infineon Technologies, BUZ73AH Datasheet

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BUZ73AH

Manufacturer Part Number
BUZ73AH
Description
Manufacturer
Infineon Technologies
Datasheets
SIPMOS
Rev. 2.4
• N channel
• Enhancement mode
• Avalanche-rated
. Halogen-free according to IEC61249-2-21
Type
BUZ 73 A
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 3.67 mH, T
Gate source voltage
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
C
C
C
= 7 A, V
= 37 ˚C
= 25 ˚C
= 25 ˚C
®
Power Transistor
DD
= 50 V, R
j
= 25 ˚C
V
200 V
DS
GS
= 25
jmax
I
5.5 A
D
jmax
R
0.6
DS(on )
Page 1
Symbol
I
I
I
E
E
V
P
T
T
R
R
D
Dpuls
AR
stg
j
AR
AS
GS
tot
thJC
thJA
Package
PG-TO-220-3
Pin 1
G
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
±
E
120
75
yes
5.5
6.5
40
Pb-free
22
7
3.1
20
Pin 2
D
BUZ 73A H
2009-11-10
V
W
˚C
K/W
Unit
A
mJ
Pin 3
S

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