RJK0328DPB-01#J0 Renesas Electronics America, RJK0328DPB-01#J0 Datasheet - Page 4

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RJK0328DPB-01#J0

Manufacturer Part Number
RJK0328DPB-01#J0
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of RJK0328DPB-01#J0

Lead Free Status / Rohs Status
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Company:
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RJK0328DPB-01#J0
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RJK0328DPB-01#J0
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RJK0328DPB-01
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
100
Static Drain to Source on State Resistance
50
40
30
20
10
10
80
60
40
20
0
0
0
8
6
4
2
–25
25
0
Pulse Test
I
Channel Temperature Tch (°C)
D
Maximum Avalanche Energy vs.
V
V
Channel Temperature Derating
Case Temperature
Dynamic Input Characteristics
= 60 A
GS
DS
0
Gate Charge
40
50
= 4.5 V
V
10 V
DD
25
vs. Temperature
= 25 V
10 V
75
80
I
50
D
= 5 A, 10 A, 20 A
V
DD
75
100
5 A, 10 A, 20 A
120
= 25 V
I
V
duty < 0.1 %
Rg ≥ 50 Ω
Qg (nc)
AP
10 V
DD
100 125 150
Tc
= 30 A
= 15 V
160
125
(
V
°
GS
C)
200
150
20
16
12
8
4
0
10000
3000
1000
300
100
100
30
10
80
60
40
20
0
0
Drain to Source Voltage V
Source to Drain Voltage V
V
f = 1 MHz
GS
Reverse Drain Current vs.
= 0
0.4
5 V
Typical Capacitance vs.
Drain to Source Voltage
Source to Drain Voltage
10 V
10
0.8
V
GS
1.2
= 0, –5V
20
Pulse Test
1.6
Coss
DS
SD
Crss
Ciss
Preliminary
Page 4 of 6
(V)
(V)
30
2.0