RJK0328DPB-01#J0 Renesas Electronics America, RJK0328DPB-01#J0 Datasheet

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RJK0328DPB-01#J0

Manufacturer Part Number
RJK0328DPB-01#J0
Description
Manufacturer
Renesas Electronics America
Datasheet
1.RJK0328DPB-01J0.pdf (7 pages)

Specifications of RJK0328DPB-01#J0

Lead Free Status / Rohs Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RJK0328DPB-01#J0
Manufacturer:
REA
Quantity:
5 000
Company:
Part Number:
RJK0328DPB-01#J0
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
RJK0328DPB-01
Silicon N Channel Power MOS FET
Power Switching
Features
 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
 Pb-free
 Halogen-free
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
R
DS(on)
2. Value at Tch = 25C, Rg  50 
3. Tc = 25C
= 1.6 m
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
Item
typ. (at V
GS
= 10 V)
5
1 2
I
ch-c
D(pulse)
E
Pch
3 4
Symbol
I
AP
AR
V
V
Tstg
Tch
I
GSS
I
DSS
DR
Note 2
D
Note 2
Note3
Note3
Note1
G
4
–55 to +150
Ratings
D
S S S
5
1 2 3
1.93
150
20
240
30
60
60
30
90
65
Preliminary
(Previous: REJ03G1637-0400)
1, 2, 3
4
5
R07DS0264EJ0500
Source
Gate
Drain
Datasheet
C/W
Unit
Mar 01, 2011
mJ
C
C
W
V
V
A
A
A
A
(Ta = 25°C)
Page 1 of 6
Rev.5.00