BF517E6327XT Infineon Technologies, BF517E6327XT Datasheet - Page 3

• Manufacturer Part Number: BF517E6327XT
• Manufacturer: Infineon Technologies

Specifications of BF517E6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 40
• Power Dissipation: 280mW
• Frequency (max): 2.5GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 800 MHz
Transducer gain
I
f = 500 MHz
Third order intercept point at output
V
Z
1dB Compression point
I
f = 800 MHz
C
C
C
C
C
S
CB
CE
EB
CE
= 2 mA, V
= 25 mA, V
= 2 mA, V
= 20 mA, V
= 20 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, I
Sopt
, Z
C
CE
CE
L
CE
CE
CE
= 20 mA, f = 800 MHz,
= Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, f = 200 MHz
= 5 V, Z
= 5 V, Z
Lopt
BE
BE
S
S
S
CB
= 50
= 0 ,
= 0 ,
= Z
= Z
= 0 ,
L
L
A
= 50 ,
= 50 ,
,
= 25°C, unless otherwise specified
3
Symbol
f
C
C
C
F
|S
IP
P
T
-1dB
cb
ce
eb
21e
3
|
2
min.
1.3
1
-
-
-
-
-
-
-
Values
21.5
0.55
0.27
typ.
1.4
2.5
0.9
3.5
13
10
max.
1.45
0.8
5
2007-04-20
-
-
-
-
-
-
BF517
Unit
GHz
pF
dB
dB
dBm
-