SFT1341-TL-E ON Semiconductor, SFT1341-TL-E Datasheet - Page 4

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SFT1341-TL-E

Manufacturer Part Number
SFT1341-TL-E
Description
MOSFET Power SWITCHING DEVICE
Manufacturer
ON Semiconductor
Datasheet

Specifications of SFT1341-TL-E

Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SFT1341-TL-E
Manufacturer:
ON Semiconductor
Quantity:
500
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
Note on usage : Since the SFT1341 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of April, 2009. Specifi cations and information herein are subject
to change without notice.
V DS = --20V
I D = --10A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
1
20
2
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
3
60
of highly charged objects.
V GS -- Qg
P D -- Ta
4
80
5
100
6
120
7
140
8
IT14530
IT14532
160
9
SFT1341
--1.0
--0.1
--10
--0.1
7
5
3
2
7
5
3
2
7
5
3
2
I DP = --40A
I D = --10A
Tc=25 ° C
Single pulse
2
3
Drain-to-Source Voltage, V DS -- V
Operation in
this area is
limited by R DS (on).
5
7
--1.0
A S O
2
3
PW≤10μs
5
7
--10
PS
2
No. A1444-4/4
3
IT14531
5
7

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