AUIRFR3806 International Rectifier, AUIRFR3806 Datasheet

AUIRFR3806

Manufacturer Part Number

AUIRFR3806

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheet

1.AUIRFR3806TRR.pdf (12 pages)

Specifications of AUIRFR3806

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Continuous Drain Current

43 A

Power Dissipation

71 W

Mounting Style

SMD/SMT

Package / Case

DPAK

Gate Charge Qg

22 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFR3806

Manufacturer:

Quantity:

12 500

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Download datasheet (273Kb)

Features

●

Description

Specifically designed for Automotive applications, this HEXFET

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast switching

speed and improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and reliable

device for use in Automotive applications and a wide variety of other

applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

dv/dt

Thermal Resistance

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Symbol

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Parameter

AUTOMOTIVE GRADE

@ 10V

) is 25°C, unless otherwise specified.

DSS

DS(on)

Gate

Typ.

0.50

–––

AUIRFR3806

-55 to + 175

typ.

max.

Max.

HEXFET Power MOSFET

0.47

300

± 20

170

7.1

AUIRFR3806

D-Pak

Drain

Max.

2.12

–––

12.6m Ω

15.8m Ω

43A

60V

Source

Units

W/°C

°C/W

V/ns

°C

03/11/11

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