AUIRLR3114Z International Rectifier, AUIRLR3114Z Datasheet - Page 5

• Manufacturer Part Number: AUIRLR3114Z
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRLR3114Z

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Gate Charge Qg: 40 nC
• Lead Free Status / Rohs Status: Details

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100000
10000
1000
1000
100
100
1.0
10
Fig 7. Typical Source-Drain Diode
0.0
1
Fig 5. Typical Capacitance vs.
T J = 175°C
V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
0.5
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
1.0
T J = 25°C
C iss
C rss
C oss
f = 1 MHZ
1.5
10
2.0
V GS = 0V
2.5
100
3.0
10000
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
1
0
1
Fig 8. Maximum Safe Operating Area
I D = 42A
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge vs.
V DS , Drain-to-Source Voltage (V)
V DS = 32V
V DS = 20V
V DS = 8.0V
10
Q G , Total Gate Charge (nC)
Gate-to-Source Voltage
10msec
OPERATION IN THIS AREA
LIMITED BY R DS (on)
20
1msec
DC
10
100μsec
30
40
100
50
5