AUIRLR3114Z International Rectifier, AUIRLR3114Z Datasheet - Page 4

• Manufacturer Part Number: AUIRLR3114Z
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRLR3114Z

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 130 A
• Power Dissipation: 140 W
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Gate Charge Qg: 40 nC
• Lead Free Status / Rohs Status: Details

4
1000
1000
100
Fig 1. Typical Output Characteristics
100
0.1
Fig 3. Typical Transfer Characteristics
0.1
10
10
1
1
0.1
1
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
2.5V
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
1
3
T J = 25°C
≤ 60μs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤60μs PULSE WIDTH
4
10
5
6
100
7
Fig 4. Typical Forward Transconductance
1000
200
150
100
100
50
10
0
1
0.1
0
Fig 2. Typical Output Characteristics
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
20
vs. Drain Current
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.5V
1
40
T J = 25°C
V DS = 10V
380μs PULSE WIDTH
≤ 60μs PULSE WIDTH
Tj = 175°C
T J = 175°C
60
10
80
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100
100