AUIRF7379Q International Rectifier, AUIRF7379Q Datasheet - Page 7

• Manufacturer Part Number: AUIRF7379Q
• Description: MOSFET Power
• Manufacturer: International Rectifier

Specifications of AUIRF7379Q

• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Gate Charge Qg: 16.7 nC
• Lead Free Status / Rohs Status: Details

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2.0
1.5
1.0
0.5
0.0
-60
Fig 15. Normalized On-Resistance
I
D
-40
= -3.0A
T , Junction Temperature (°C)
-20
J
Vs. Temperature
0
20
40
60
80
100 120 140 160
0.16
0.14
0.12
0.10
0.08
0.06
V
Fig 17. Typical On-Resistance Vs. Gate
GS
0
= -10V
-V
GS
A
4
, Gate-to-Source Voltage (V)
Voltage
8
ID = -4.3A
0.50
0.40
0.30
0.20
0.10
0.00
0
Fig 16. Typical On-Resistance Vs. Drain
12
2
-I
D
16
4
VGS = -4.5V
, Drain Current (A)
6
Current
8
VGS = -10V
10
12
14
7