AUIRF7379Q International Rectifier, AUIRF7379Q Datasheet

AUIRF7379Q

Manufacturer Part Number

AUIRF7379Q

Description

MOSFET Power

Manufacturer

International Rectifier

Datasheets

1.AUIRF7379Q.pdf (12 pages)

2.AUIRF7379Q.pdf (13 pages)

Specifications of AUIRF7379Q

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

75 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

4.8 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Gate Charge Qg

16.7 nC

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRF7379QTRPBF

Manufacturer:

Quantity:

20 000

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Download datasheet (217Kb)

Features

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Specifically designed for Automotive applications, these

HEXFET

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a 150°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits combine

to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other

applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it ideal

in a variety of power applications. This dual, surface mount

SO-8 can dramatically reduce board space and is also available

in Tape & Reel.

Description

dv/dt

Thermal Resistance

STG

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Automotive [Q101] Qualified

Lead-Free, RoHS Compliant

= 25°C

= 70°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET's in a Dual SO-8 package utilize

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Power Dissipation

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE MOSFET

@ 10V

Gate

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

N-Channel

Typ.

–––

4.8

4.6

5.0

Drain

SO-8

-55 to + 150

AUIRF7379Q

Max.

HEXFET

0.02

± 20

2.5

(BR)DSS

DS(on)

P-Channel

Source

Max.

-4.3

-3.4

-5.0

-30

-34

typ.

max. 0.045Ω 0.090Ω

Power MOSFET

N-Ch

30V

0.038Ω 0.070Ω

5.8A

Units

°C/W

V/ns

°C

04/04/11

P-Ch

-4.3A

-30V

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