FW813-TL-H ON Semiconductor, FW813-TL-H Datasheet
FW813-TL-H
Specifications of FW813-TL-H
Related parts for FW813-TL-H
FW813-TL-H Summary of contents
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... Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Package Dimensions unit : mm (typ) 7005A-003 5 1.27 0.43 FW813 SANYO Semiconductors Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (2000mm P T When mounted on ceramic substrate (2000mm Tch Tstg Product & ...
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... G FW813 P.G 50Ω 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage FW813 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =60V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V = (on =5A =10V R DS (on =3A =4. (on =3A =4V Ciss V DS =20V, f=1MHz ...
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... Gate-to-Source Voltage 1 0 0.01 0.1 1.0 Drain Current Time -- I D 100 (on 1 0.1 1.0 Drain Current =30V = Total Gate Charge FW813 140 Ta=25 ° C 120 100 --60 --40 --20 IT16124 =10V 0.2 10 IT16126 1000 V DD =30V =10V 100 IT16128 100 1 Operation in this area is limited (on) ...
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... Ambient Temperature °C Note on usage : Since the FW813 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...