ECH8663R-TL-H ON Semiconductor, ECH8663R-TL-H Datasheet - Page 3

• Manufacturer Part Number: ECH8663R-TL-H
• Description: MOSFET N-CH DUAL 30V 8A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8663R-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20.5 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 12.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10000
1000
100
1.0
10
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0
0.01
0
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0
0
V DS =10V
2
2
3
0.1
3.0A
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
5 7
3
I D =1.5A
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
0.1
SW Time -- I D
5
⏐
I D -- V DS
0.2
4
y
7
2
fs⏐ -- I D
1.0
3
5 7
0.3
6
2
1.0
3
2
0.4
8
V DD =10V
V GS = 4.5 V
3
Ta=25 ° C
5
IT13806
IT13613
IT13615
IT13680
5 7
ECH8663R
7
0.5
10
10
10
0.001
0.01
1.0
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
10
40
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
--60
0.1
0
0
V GS =0V
V DS =10V
I D =8A
--40
1
0.2
2
--20
0.5
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- °C
3
0.3
Total Gate Charge, Qg -- nC
0
4
R DS (on) -- Ta
20
0.4
V GS -- Qg
I D -- V GS
I S -- V SD
5
1.0
40
6
0.5
60
7
1.5
0.6
8
80
9
100
0.7
No. A1184-3/4
10
2.0
V DS =10V
120
11
0.8
IT13612
IT13614
IT13616
IT13681
140 160
12
2.5
0.9
13