ECH8663R-TL-H ON Semiconductor, ECH8663R-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8663R-TL-H
• Description: MOSFET N-CH DUAL 30V 8A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8663R-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20.5 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 12.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: -
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7011A-003
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
4.5V
0V
PW=10μs
D.C.≤1%
V IN
1
8
0.65
Parameter
Bottom View
V IN
Top View
2.9
G
50Ω
R g =1kΩ
5
R g
4
0.3
V DD =15V
D
S
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.15
I D =4A
R L =3.75Ω
ECH8663R
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)4
Symbol
0 to 0.02
V OUT
t d (on)
t d (off)
V SD
Qgs
Qgd
Qg
t r
t f
I D =4A, V GS =4.5V
I D =4A, V GS =4.0V
I D =2A, V GS =3.1V
I D =2A, V GS =2.5V
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =4.5V, I D =8A
V DS =10V, V GS =4.5V, I D =8A
V DS =10V, V GS =4.5V, I D =8A
I S =8A, V GS =0V
ECH8663R
Electrical Connection
Conditions
8
1
7
2
6
3
5
4
min
10.5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
12
12
11
Ratings
typ
4200
1800
15.5
17.5
12.3
0.75
320
850
2.4
2.8
16
20
max
20.5
1.2
21
23
28
No. A1184-2/4
Unit
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
ns
ns
ns
ns
V